Abstract:As a recent member of the two-dimensional (2D) van der Waals (vdW) heterostructures, the WSe2/CrSe2 heterostructure has received considerable attention due to its fascinating characteristics compared with the constituent 2D materials. In this paper, we performed first-principles calculations to investigate its structural, electronic, and magnetic properties and explored the effects of interlayer and in-plane strains on these properties. Our results reveal that the antiferromagnetic (AFM) ground state in the CrSe2 layer of the heterostructure is maintained owing to weak vdW interactions between the CrSe2 and WSe2 layers. However, the AFM state can be transformed into the ferromagnetic state at interlayer compressive strain of -19% or in-plane tensile strain of 2.5%. Moreover, the WSe2/CrSe2 heterointerface belongs to the metal-semiconductor interface and exhibits p-type ohmic contact and low contact resistance. The transition from p-type ohmic contact to p-type Schottky contact or n-type Schottky contact can be achieved by interlayer or in-plane strain engineering, which is associated with the strain-induced energy shifts of the valence band maximum and conduction band minimum of WSe2. Additionally, the tunneling probability of the heterostructure rises dramatically (up to 100%) with interlayer coupling, which is favorable for carrier transport at the heterointerface. Our findings demonstrate that strain engineering is an effective way of modulating metal-semiconductor interfaces and provide theoretical guidance for designing electronic and magnetic devices based on the WSe2/CrSe2 vdW heterostructure as well as broadening its applications in future functional devices.

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Strain Engineering and Electric Field Tunable Electronic Properties of Janus MoSSe/WX2 (X = S, Se) van der Waals Heterostructures

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First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure

The structure and electronic properties of the MoSe<sub>2</sub>/PtS<sub>2</sub> van der Waals heterostructure

First-principles Calculations on Strain and Electric Field Induced Band Modulation and Phase Transition of Bilayer WSe 2 MoS 2 Heterostructure

Band Structure Engineering in A Mos2/Pbi2 Van Der Waals Heterostructure Via an External Electric Field

Unraveling energy and charge transfer in type-II van der Waals heterostructures

Electric Field Effects on the Electronic Structures of MoS2/antimonene Van Der Waals Heterostructure

Electronic and Optical Properties of Heterostructures Based on Transition Metal Dichalcogenides and Graphene-Like Zinc Oxide.

The Tunability of Electronic and Transport Properties of InSe/MoSe2 Van Der Waals Heterostructure: A First-Principles Study

Electronic Properties of Two-Dimensional In-Plane Heterostructures of WS2/WSe2/MoS2

Modulating the Electronic Structure and Interface Contact of WSe2/CrSe2 Van Der Waals Heterostructures by Strain Engineering: Insights from First-Principles Calculations

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures