Abstract:The emergence of van der Waals (vdW) heterostructures, which consist of vertically stacked two-dimensional (2D) materials held together by weak vdW interactions, has introduced an innovative avenue for tailoring nanoelectronic devices. In this study, we have theoretically designed a metal/semiconductor heterostructure composed of NbS 2 and Janus MoSSe, and conducted a thorough investigation of its electronic properties and the formation of contact barriers through first-principles calculations. The effects of stacking configurations and the influence of external electric fields in enhancing the tunability of the NbS 2 /Janus MoSSe heterostructure are also explored. Our findings demonstrate that the NbS 2 /MoSSe heterostructure is not only structurally and thermally stable but also exfoliable, making it a promising candidate for experimental realization. In its ground state, this heterostructure exhibits p-type Schottky contacts characterized by small Schottky barriers and low tunneling barrier resistance, showing its considerable potential for utilization in electronic devices. Additionally, our findings reveal that the electronic properties, contact barriers and contact types of the NbS 2 /MoSSe heterostructure can be tuned by applying electric fields. A negative electric field leads to a conversion from a p-type Schottky contact to an n-type Schottky contact, whereas a positive electric field gives rise to a transformation from a Schottky into an ohmic contact. These insights offer valuable theoretical guidance for the practical utilization of the NbS 2 /MoSSe heterostructure in the development of next-generation electronic and optoelectronic devices.

Electric Field Effects on the Electronic Structures of MoS2/antimonene Van Der Waals Heterostructure

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

A van der Waals pn heterojunction with organic/inorganic semiconductors

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Effect of vertical strain and in-plane biaxial strain on type-II MoSi<sub>2</sub>N<sub>4</sub>/Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> van der Waals heterostructure

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure

First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure

Strain and electric field tuning the electronic properties of two-dimensional MoS2/ScCl3 van der Waals heterostructure

The structure and electronic properties of the MoSe<sub>2</sub>/PtS<sub>2</sub> van der Waals heterostructure

Exploring the versatility in the MoSe2/WS2 heterostructures

Electric fields and strains effect on the electronic and optical properties of Zr2CO2/MoSSe van der Waals heterostructure

Recent progress on the interfacial regulation and application of 2D antimonene-based van der Waals heterostructures

Unraveling energy and charge transfer in type-II van der Waals heterostructures

Electronic, thermoelectric, transport and optical properties of MoSe2/BAs van der Waals heterostructures

Electronic and Optical Properties of Pristine and Vertical and Lateral Heterostructures of Janus MoSSe and WSSe

Modulation of electronic and optical properties of BlueP/MoSSe heterostructures via biaxial strain and vertical electric field

Electronic Structures and Band Alignment Transition in Double-Wall MoS2/WS2 Nanotubes for Optoelectronic Applications