First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure

Son-Tung Nguyen,Nguyen V. Hieu,Huy Le-Quoc,Kien Nguyen-Ba,Chuong V. Nguyen,Huynh V. Phuc,Nguyen Cuong
DOI: https://doi.org/10.1039/d4na00193a
IF: 5.598
2024-05-22
Nanoscale Advances
Abstract:Two-dimensional (2D) van der Waals (vdW) heterostructures are considered as promising candidate for realizing multifunctional applications, including photodetectors, field effect transistor and solar cells. In this work, we performed first-principles calculations to design the 2D vdW MoTe2/MoS2 heterostructure and investigate its electronic properties, contact types and the impact of the electric field and in-plane biaxial strain. We find that the MoTe2/MoS2 heterostructure is predicted to be structurally, thermally and mechanically stable. It is obvious that the weak vdW interactions are mainly dominated at the interface of the MoTe2/MoS2 heterostructure and thus it can be synthesized in recent experiments by the transfer method or chemical vapor deposition. The construction of vdW MoTe2/MoS2 heterostructure form staggered type II band alignment, effectively separating the electrons and holes at the interface and thereby extending the carrier lifetime. Interestingly, the electronic properties and contact types of type II vdW MoTe2/MoS2 heterostructure can be tailored under the application of external conditions, including electric field and in-plane biaxial strain. The semiconductor-semimetal-metal transition and type II - type I conversion can be achieved in the vdW MoTe2/MoS2 heterostructure. Our findings underscore the potential of the vdW MoTe2/MoS2 heterostructure for the design and fabrication of multifunctional applications, including electronics and optoelectronics.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to design a 2D van der Waals (vdW) MoTe₂/MoS₂ heterostructure through first - principles calculations and study its electronic properties, contact types and the influence of external conditions (such as electric fields and in - plane biaxial strains) on it. Specifically, the paper aims to: 1. **Design and Stability Analysis**: Design a 2D vdW MoTe₂/MoS₂ heterostructure and verify its structural, thermodynamic and mechanical stabilities. 2. **Study of Electronic Properties**: Explore the electronic band structure of the MoTe₂/MoS₂ heterostructure, especially the characteristics of its formation of type - II band alignment, which can effectively separate electrons and holes and prolong the carrier lifetime. 3. **Influence of External Conditions**: Study the influence of external conditions (such as electric fields and in - plane biaxial strains) on the electronic properties and contact types of the MoTe₂/MoS₂ heterostructure, including semiconductor - semimetal - metal transitions and type - II to type - I band alignment conversions. 4. **Application Potential**: Evaluate the potential applications of the MoTe₂/MoS₂ heterostructure in multi - functional devices (such as electronic and optoelectronic devices). Through these studies, the paper hopes to provide a theoretical basis for the design and preparation of 2D vdW MoTe₂/MoS₂ heterostructures and provide guidance for their optimization in practical applications.