Abstract:The emergence of van der Waals (vdW) heterostructures, which consist of vertically stacked two-dimensional (2D) materials held together by weak vdW interactions, has introduced an innovative avenue for tailoring nanoelectronic devices. In this study, we have theoretically designed a metal/semiconductor heterostructure composed of NbS 2 and Janus MoSSe, and conducted a thorough investigation of its electronic properties and the formation of contact barriers through first-principles calculations. The effects of stacking configurations and the influence of external electric fields in enhancing the tunability of the NbS 2 /Janus MoSSe heterostructure are also explored. Our findings demonstrate that the NbS 2 /MoSSe heterostructure is not only structurally and thermally stable but also exfoliable, making it a promising candidate for experimental realization. In its ground state, this heterostructure exhibits p-type Schottky contacts characterized by small Schottky barriers and low tunneling barrier resistance, showing its considerable potential for utilization in electronic devices. Additionally, our findings reveal that the electronic properties, contact barriers and contact types of the NbS 2 /MoSSe heterostructure can be tuned by applying electric fields. A negative electric field leads to a conversion from a p-type Schottky contact to an n-type Schottky contact, whereas a positive electric field gives rise to a transformation from a Schottky into an ohmic contact. These insights offer valuable theoretical guidance for the practical utilization of the NbS 2 /MoSSe heterostructure in the development of next-generation electronic and optoelectronic devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to design a new type of metal/semiconductor van der Waals heterostructure (composed of NbS₂ and Janus MoSSe) through theoretical prediction, study its electronic properties and the formation of contact barriers, and explore the influence of stacking configurations and the enhancing effect of an external electric field on the tuning ability of the NbS₂/Janus MoSSe heterostructure. Specifically, the paper focuses on the following aspects: 1. **Research on electronic properties and contact barriers**: Through first - principles calculations, the electronic properties of the NbS₂/Janus MoSSe heterostructure and the contact barriers formed therein are discussed in detail. It is found that this heterostructure not only performs well in terms of structural and thermal stability, but also has a small Schottky barrier and low tunneling barrier resistance, showing its potential application value in electronic devices. 2. **Influence of stacking configurations**: The influence of different stacking configurations on the performance of the NbS₂/Janus MoSSe heterostructure is studied. The results show that different stacking methods will lead to different interface distances and binding energies, which in turn affect the electronic properties and contact characteristics of the heterostructure. 3. **Role of external electric fields**: By applying an external electric field, its regulation ability on the electronic properties and contact types of the heterostructure is studied. The results show that a negative electric field can convert a p - type Schottky contact into an n - type Schottky contact, while a positive electric field can convert a Schottky contact into an Ohmic contact. These findings provide theoretical guidance for regulating the NbS₂/Janus MoSSe heterostructure in practical applications. 4. **Stability of materials**: By calculating the binding energy and dynamic stability (such as phonon spectrum analysis), the stability of the NbS₂/Janus MoSSe heterostructure is verified, indicating that it can be synthesized by various technical means in experiments. In summary, this paper aims to systematically study the electronic properties and contact characteristics of the NbS₂/Janus MoSSe heterostructure through theoretical calculations and simulations, and explore its application potential in next - generation electronic and optoelectronic devices.

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