Abstract:The assembly of van der Waals (vdw) heterostructure with easily regulated electronic properties provides a new way for the expansion of two-dimentional (2D) materials and promotes the development of optoelectronics, sensors, switching devices and other fields. In this work, a systematic investigation of the electronic properties of MoGe2N4/SiC heterostructures using density functional theory (DFT) has been conducted, along with the modulation of electronic properties by vertical strain and the potential application prospects in optoelectronic devices. The results show that MoGe2N4/SiC heterostructure has excellent dynamic and thermal stability and belongs to type-II band alignment semiconductors. This is extremely beneficial for the separation of photo-generating electron-hole pairs, so it has important significance for the development of photovoltaic materials. In addition, under the control of vertical strain, the semiconductor-metal transition occurs in the MoGe2N4/SiC heterostructure when the compressive strain reaches 6%. In the case of compressive strain less than 6% and tensile strain, the MoGe2N4/SiC heterostructure maintains the type-II band alignment semiconductor characteristics. Meanwhile, we find that the MoGe2N4/SiC heterostructure has optical absorption coefficients of up to 105 in the visible and ultraviolet light ranges, which can improve the absorption coefficients of the MoGe2N4 and SiC monolayer in some visible light regions. Finally, the optical conductivity of the MoGe2N4/SiC heterostructure exhibits significant anisotropy, with the armchair direction displaying higher conductivity within the orange light range. In conclusion, the formation of vdW heterostructure by vertically stacking MoGe2N4 and SiC monolayers can effectively improve their electronic and optical properties, which provides a valuable reference for the future development of electronic devices and photovoltaic materials.

Two-Dimensional Electron Gas in MoSi2N4/VSi2N4 Heterojunction by First Principles Calculation

Two-dimensional electron gas in MoSi<sub>2</sub>N<sub>4</sub>/VSi<sub>2</sub>N<sub>4</sub> heterojunction from first principles

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Electronic and optical properties of two-dimensional MoSi2N4/SiC heterojunction: First-principles study

Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure

MoSi2N4/WO2 Van Der Waals Heterostructure: Theoretical Prediction of an Effective Strategy to Boost MoSi2N4′s Nanoelectronic and Optoelectronic Applications

First-principles insights of electronic properties of Blue Phosphorus/MoSi2N4 van der Waals heterostructure via vertical electric field and biaxial strain

One-dimensional electron gas in strained lateral heterostructures of single layer materials

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Large Out-of-plane Piezoelectric Response and Ultra-Low Polarization Transition Barriers in Two-Dimensional MoGe2N4/MoSi2N4 Heterostructures

A Two-Dimensional MoS2/C3N Broken-Gap Heterostructure, a First Principles Study

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi$_2$N$_4$

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi 2 N 4

Structure and Electronic Properties of MoSi2P4 Monolayer

A dielectric-defined lateral heterojunction in a monolayer semiconductor

Exploring electronic and valley properties of single-layer SMSiN 2 (M = Mo, W): a first-principles study on two-dimensional Janus materials