Abstract:The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct growth of a heterostructure of two different materials constrains the available band offsets, and it is still unclear if large built-in potentials are attainable for 2D materials. The electronic properties of atomically thin semiconducting transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and quasiparticle band gap depend strongly on the proximal environment. Recent studies have shown that this effect can be harnessed to engineer the lateral band profile of monolayer TMDs to create a heterojunction. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe2 by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe2 monolayer to create a large built-in potential of 0.83 eV. We spatially resolve the MoSe2 band profile and work function using scanning tunneling spectroscopy to map out the nanoscale depletion region. The Se intercalation also modifies the dielectric environment, influencing the local band gap renormalization and increasing the MoSe2 band gap by ~0.26 eV. This work illustrates that environmental proximity engineering provides a robust method to indirectly manipulate the band profile of 2D materials outside the limits of their intrinsic properties, providing avenues for future device design.

A dielectric-defined lateral heterojunction in a monolayer semiconductor

A van der Waals pn heterojunction with organic/inorganic semiconductors

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Atomically Flat Dielectric Patterns for Band Gap Engineering and Lateral Junction Formation in MoSe$_2$ Monolayers

Lateral Heterojunctions Within Monolayer Semiconductors

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Simulation of electrical rectification effect in two-dimensional MoSe2/WSe2 lateral heterostructures

Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions

Dielectric engineering enable to lateral anti-ambipolar MoTe 2 heterojunction

Gate-Tunable Junctions within Monolayer MoS 2 –WS 2 Lateral Heterostructures

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

High-Performance Heterojunctions Based On 2d Semiconductors

Simulation of electrical rectification effect in two-dimensional MoSe2/WSe2lateral heterostructures

Layer-Dependent Electron Transfer and Recombination Processes in MoS2/WSe2 Multilayer Heterostructures.

Band alignment of two-dimensional lateral heterostructures

Two-dimensional electron gas in MoSi<sub>2</sub>N<sub>4</sub>/VSi<sub>2</sub>N<sub>4</sub> heterojunction from first principles

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures