Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

Band alignment of two-dimensional lateral heterostructures

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

A van der Waals pn heterojunction with organic/inorganic semiconductors

Two‐dimensional Lateral Heterojunction Arrays with Tailored Interface Band Bending

Two-dimensional Square Transition Metal Dichalcogenides with Lateral Heterostructures

Design of Lateral Heterostructure from Arsenene and Antimonene

Recent Advances in 2D Lateral Heterostructures

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

Lateral Heterojunctions Within Monolayer Semiconductors

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Tuning electronic properties in the C3N/C3B lateral heterostructures

Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS 2(1‐ x ) Se 2 x /SnS 2(1‐ y ) Se 2 y Heterostructures

A New Device Architecture Based on Two Dimensional Van Der Waals Heterostructures

A dielectric-defined lateral heterojunction in a monolayer semiconductor

Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy

Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures

Independent Band Modulation in 2D Van Der Waals Heterostructures Via a Novel Device Architecture

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Lateral Topological Crystalline Insulator Heterostructure

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures