Abstract:The assembly of van der Waals (vdw) heterostructure with easily regulated electronic properties provides a new way for the expansion of two-dimentional (2D) materials and promotes the development of optoelectronics, sensors, switching devices and other fields. In this work, a systematic investigation of the electronic properties of MoGe2N4/SiC heterostructures using density functional theory (DFT) has been conducted, along with the modulation of electronic properties by vertical strain and the potential application prospects in optoelectronic devices. The results show that MoGe2N4/SiC heterostructure has excellent dynamic and thermal stability and belongs to type-II band alignment semiconductors. This is extremely beneficial for the separation of photo-generating electron-hole pairs, so it has important significance for the development of photovoltaic materials. In addition, under the control of vertical strain, the semiconductor-metal transition occurs in the MoGe2N4/SiC heterostructure when the compressive strain reaches 6%. In the case of compressive strain less than 6% and tensile strain, the MoGe2N4/SiC heterostructure maintains the type-II band alignment semiconductor characteristics. Meanwhile, we find that the MoGe2N4/SiC heterostructure has optical absorption coefficients of up to 105 in the visible and ultraviolet light ranges, which can improve the absorption coefficients of the MoGe2N4 and SiC monolayer in some visible light regions. Finally, the optical conductivity of the MoGe2N4/SiC heterostructure exhibits significant anisotropy, with the armchair direction displaying higher conductivity within the orange light range. In conclusion, the formation of vdW heterostructure by vertically stacking MoGe2N4 and SiC monolayers can effectively improve their electronic and optical properties, which provides a valuable reference for the future development of electronic devices and photovoltaic materials.

Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Surface Termination and Band Alignment in 2D Heterostructures

Effect of vertical strain and in-plane biaxial strain on type-II MoSi<sub>2</sub>N<sub>4</sub>/Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> van der Waals heterostructure

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Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS 2(1‐ x ) Se 2 x /SnS 2(1‐ y ) Se 2 y Heterostructures

First principles calculations investigation of optoelectronic properties and photocatalytic CO2 reduction of (MoSi2N4)5-n/(MoSiGeN4)n in-plane heterostructures

Band Alignment of Atomic Layer Deposited MoS2/(HfO2) X (al2o3)1−x Heterojunctions for Device Applications

Characterization of Type I/II g-C 3 N 4 /MoS 2 van der Waals Heterostructures: A New Theoretical Insight

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

Investigation of Band Alignment for Hybrid 2D-Mos2/3d-β-ga2o3 Heterojunctions with Nitridation

Band alignment of two-dimensional lateral heterostructures

Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure

Electronic structures and photovoltaic applications of vdW heterostructures based on Janus group-IV monochalcogenides: insights from first-principles calculations

Structural, electronic, and charge transfer features for two kinds of MoS 2 /Cs 2 PbI 4 interfaces with optoelectronic applicability: Insights from first-principles

Electronic structure and photocatalytic mechanism of g-SiC/MoSSe van der waals heterostructures: A first principles study

Insights into the photocatalytic mechanism of the C4N/MoS2 heterostructure: A first-principle study

Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective