Abstract:Atomically thin bismuth oxyselenide (Bi2 O2 Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi2 O2 Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi2 O2 Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi2 O2 Se and representative transition metal dichalcogenides (namely, WS2 /Bi2 O2 Se and MoS2 /Bi2 O2 Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump-probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi2 O2 Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

Structural, electronic, and charge transfer features for two kinds of MoS 2 /Cs 2 PbI 4 interfaces with optoelectronic applicability: Insights from first-principles

A van der Waals pn heterojunction with organic/inorganic semiconductors

Interfacial Electronic Properties and Adjustable Schottky Barrier at Graphene/CsPbI3 Van Der Waals Heterostructures

Effect of vertical strain and in-plane biaxial strain on type-II MoSi<sub>2</sub>N<sub>4</sub>/Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> van der Waals heterostructure

Type-II Lateral Heterostructures of Monolayer Halide Double Perovskites for Optoelectronic Applications

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Controllable Interlayer Charge and Energy Transfer in Perovskite Quantum Dots/Transition Metal Dichalcogenide Heterostructures

Uncovering the photoelectronic/catalytic property modulation and applications of 2D MoS2: from the perspective of constructing heterogeneous interfaces

Optoelectronic properties and interfacial interactions of two-dimensional Cs 2 PbX 4 –MSe 2 (M = Mo, W) heterostructures

Two-dimensional Polarized MoSSe/MoTe 2 Van Der Waals Heterostructure: A Polarization-Tunable Optoelectronic Material

Charge Transfer Properties of Heterostructures Formed by Bi 2 O 2 Se and Transition Metal Dichalcogenide Monolayers

3D/2D lead-free halide perovskite CsSnBr 3 /MoX (X = Se 2 , SSe, S 2 ) heterostructures for high-efficiency solar cell: Interface engineering strategies and transition of band alignments

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Tailoring the Energy Funneling Across the Interface in InSe/MoS2 Heterostructures by Electrostatic Gating and Strain Engineering

Atomically Thin Twisted Heterostructure Optoelectronics Enhanced via vdW Interface Engineering

Ultrafast Charge Transfer in Perovskite Nanowire/2D Transition Metal Dichalcogenide Heterostructures.

Molecular engineer halide perovskite/lead chalcogenide heterostructure toward optoelectronic applications: A case study on CsPbBr3/PbS interface

First-principles Calculations for Heterostructure Studies Involving CsPbI3 Perovskite and IV-VI Semiconductors

Interlayer angle-dependent electronic structure and optoelectronic properties of BP-MoS2 heterostructure: A first principle study