Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS 2(1‐ x ) Se 2 x /SnS 2(1‐ y ) Se 2 y Heterostructures

Xiaoting Wang,Longfei Pan,Juehan Yang,Bo Li,Yue‐Yang Liu,Zhongming Wei
DOI: https://doi.org/10.1002/adma.202006908
IF: 29.4
2021-01-14
Advanced Materials
Abstract:<p>The interfacial tunable band alignment of heterostructures is coveted in device design and optimization of device performance. As an intentional approach, alloying allows band engineering and continuous band‐edge tunability for low‐dimensional semiconductors. Thus, combining the tunability of alloying with the band structure of a heterostructure is highly desirable for the improvement of device characteristics. In this work, the single‐step growth of alloy‐to‐alloy (MoS<sub>2(1‐</sub><i><sub>x</sub></i><sub>)</sub>Se<sub>2</sub><i><sub>x</sub></i>/SnS<sub>2(1‐</sub><i><sub>y</sub></i><sub>)</sub>Se<sub>2</sub><i><sub>y</sub></i>) 2D vertical heterostructures is demonstrated. Electron diffraction reveals the well‐aligned heteroepitaxial relationship for the heterostructure, and a near‐atomically sharp and defect‐free boundary along the interface is observed. The nearly intrinsic van der Waals (vdW) interface enables measurement of the intrinsic behaviors of the heterostructures. The optimized type‐II band alignment for the MoS<sub>2(1‐</sub><i><sub>x</sub></i><sub>)</sub>Se<sub>2</sub><i><sub>x</sub></i>/SnS<sub>2(1‐</sub><i><sub>y</sub></i><sub>)</sub>Se<sub>2</sub><i><sub>y</sub></i> heterostructure, along with the large band offset and effective charge transfer, is confirmed through quenched PL spectroscopy combined with density functional theory calculations. Devices based on completely stacked heterostructures show one or two orders enhanced electron mobility and rectification ratio than those of the constituent materials. The realization of device‐quality alloy‐to‐alloy heterostructures provides a new material platform for precisely tuning band alignment and optimizing device applications.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
What problem does this paper attempt to address?
The problem that this paper attempts to solve is how to directly synthesize high - quality two - dimensional alloy - alloy heterostructures (MoS\(_{2(1 - x)}\)Se\(_{2x}\)/SnS\(_{2(1 - y)}\)Se\(_{2y}\)) and study the intrinsic optical and electrical properties of these heterostructures. Specifically, the authors successfully synthesized vertical heterostructures with ideal van der Waals interfaces through the chemical vapor deposition (CVD) method. This interface is characterized by being atomically sharp and defect - free. In addition, they also explored the potential applications of such heterostructures in optoelectronic devices, especially enhancing the electron mobility and rectification ratio by optimizing the type - II band alignment. The key challenges mentioned in the paper include: 1. **Material synthesis**: How to achieve the direct growth of two alloy materials, MoS\(_{2(1 - x)}\)Se\(_{2x}\) and SnS\(_{2(1 - y)}\)Se\(_{2y}\), to form high - quality heterostructures without the need for an external transfer process, thereby avoiding the introduction of impurities or defects. 2. **Interface characteristics**: Study the interface characteristics of these heterostructures, especially the type of band alignment and its impact on electrical performance. Through experimental and theoretical calculations, it has been verified that these heterostructures form a type - II band alignment, and a significant photoluminescence quenching phenomenon has been observed, indicating that effective charge transfer occurs between different layers. 3. **Performance improvement**: Devices based on these heterostructures have shown significantly enhanced electrical properties, such as electron mobility and rectification ratio, which are mainly attributed to the unique interface charge transfer behavior resulting from the optimized band alignment. In conclusion, through the development of a new synthesis strategy, this paper not only solves the problem of preparing high - quality two - dimensional alloy - alloy heterostructures but also deeply explores the application potential of these materials in high - performance optoelectronic devices.