Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS 2 Matrix

Xuewen Wang,Bolun Wang,Yonghuang Wu,Enze Wang,Hao Luo,Yufei Sun,Deyi Fu,Yinghui Sun,Kai Liu

DOI: https://doi.org/10.1021/acsami.1c00725

2021-05-27

Abstract:Two-dimensional (2D) heterostructures have attracted widespread attention for their promising prospects in the fields of electronics and optoelectronics. However, in order to truly realize 2D-material-based integrated circuits, precisely controllable fabrication of 2D heterostructures is crucial and urgently needed. Here, we demonstrate an <i>ex situ</i> growth method of MoSe₂/MoS₂ lateral heterostructures by selective selenization of a laser-scanned, ultrathin oxidized region (MoO_<i>x</i>) on a monolayer MoS₂ matrix. In our method, monolayer MoS₂ is scanned by a laser with a pre-designed pattern, where the laser-scanned MoS₂ is totally oxidized into MoO_<i>x</i>. The oxidized region is then selenized in a furnace, while the unoxidized MoS₂ region remains unchanged, delivering a MoSe₂/MoS₂ heterostructure. Unlike <i>in situ</i> laser direct growth methods, our method separates the laser-scanned process from the selenization process, which avoids the long time of point-by-point selenization of MoS₂ by laser, making the efficiency of the synthesis greatly improved. The formation process of the heterostructure is studied by Raman spectroscopy and Auger electron spectroscopy. This simple and controllable approach to lateral heterostructures with desired patterns paves the way for fast and mass integration of devices based on 2D heterostructures.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c00725?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c00725</a>.MoS₂ synthesis; PL and Raman characterizations of the MoS₂/MoSe₂ heterostructure; Auger characterization of LS-MoS₂ with different oxidation degrees after selenization; diffraction images of partially oxidized MoS₂ and pristine MoS₂; optical and Raman characterizations of the transition region between the MoS₂ and MoSe₂ regions; AFM and KPFM characterizations; schematic illustration of device fabrication; and <i>I</i>_D–<i>V</i>_G curve of the MoSe₂ device (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c00725/suppl_file/am1c00725_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology