Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to develop a simple and scalable synthesis method for fabricating two - dimensional (2D) transition metal dichalcogenide (TMD) multi - junction lateral heterostructures with atomically sharp lateral junctions. Specifically, the research aims to overcome the limitations of existing methods in controlling the lateral width and composition of TMD domains and achieve precise regulation of these materials, thus paving the way for the application of high - performance, low - power electro - optical systems. ### Main problems 1. **Controlling lateral width and composition**: The existing one - step or two - step growth processes lack flexibility and cannot precisely control the lateral width and its composition of TMD domains. 2. **Atomically sharp multi - junction lateral heterostructures**: Fabricating atomically sharp multi - junction lateral heterostructures is a great challenge, but it is a crucial step for commercial applications. ### Solutions The authors propose a method to selectively control the growth of MoX₂ and WX₂ by changing the reaction gas environment (especially introducing water vapor). This method can achieve the selective growth of MoX₂ and WX₂ at high temperatures by switching the carrier gas (for example, from N₂ + H₂O(v) to Ar + H₂(5%)), thereby forming multi - junction lateral heterostructures with atomically sharp interfaces. ### Key technical points - **Carrier gas switching**: Control the growth of MoX₂ and WX₂ by switching the carrier gas. - **The role of water vapor**: Water vapor can significantly affect the volatility and oxidation behavior of metal oxides, thereby regulating the growth of materials. - **Atomically sharp interface**: The formed lateral heterostructures have atomically sharp interfaces verified by high - resolution imaging techniques such as STEM. ### Application prospects This method not only simplifies the synthesis of periodic lateral heterostructures but also lays the foundation for the development of complex 2D superlattices, devices, and integrated circuits. In addition, this method can be extended to other 2D material families, further promoting the application of 2D materials in high - performance electronic and optoelectronic devices. ### Formula Calculate the alloy concentration (x) according to Vegard's law: \[ E_g(MS_2^{(1 - x)}Se_2^x)=(1 - x)E_g(MS_2)+xE_g(MSe_2)-bx(1 - x) \] where \( M = Mo, W \), and for Mo - based and W - based alloys, the parameter \( b \) is 0.05 and 0.04 respectively. ### Summary Through the innovative carrier gas switching and water vapor introduction methods, this paper successfully achieves precise control of TMD multi - junction lateral heterostructures, solves the deficiencies of existing methods in width and composition control, and provides a new approach for the application of high - performance 2D materials.

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