Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Lateral Heterostructures: 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis (Adv. Funct. Mater. 27/2021)

One-Pot Confined Epitaxial Growth of 2D Heterostructure Arrays

Two-dimensional Square Transition Metal Dichalcogenides with Lateral Heterostructures

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis

Edge‐Epitaxial Growth of 2D NbS2‐WS2 Lateral Metal‐Semiconductor Heterostructures

Lateral epitaxial growth of two-dimensional heterostructure linked by gold adatoms

Epitaxial Growth of Two-Dimensional Magnetic Lateral and Vertical Heterostructures

Band Alignment Engineering in Two-Dimensional Lateral Heterostructures

Two‐dimensional Lateral Heterojunction Arrays with Tailored Interface Band Bending

Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Liquid-phase epitaxial growth of two-dimensional semiconductor hetero-nanostructures.

Generalized Colloidal Approach for Preparing Epitaxial 1D/2D Heterostructures

Defect-engineering of liquid-phase exfoliated 2D semiconductors: stepwise covalent growth of electronic lateral hetero-networks