Abstract:The mixed-dimensional integration of two-dimensional (2D) materials with non-2D materials can give rise to prominent advances in performance or function. To date, the mixed-dimensional one-dimensional (1D)/2D heterostructures have been fabricated using various physical assembly approaches. However, direct epitaxial growth method which has notable advantages in preparing large-scale products and obtaining perfect interfaces is rarely investigated. Herein, we demonstrate for the first time the direct synthesis of the 1D/2D mixed-dimensional heterostructures by sequential vapor-phase growth of Sb2Se3 nanowires on WS2 monolayers. X-ray diffraction (XRD) pattern and Raman spectrum confirm the composition of the Sb2Se3/WS2 heterostructures. Transmission electron microscope (TEM) measurement demonstrates high quality of the heterostructures. Electrical transport characterization reveals that Sb2Se3 nanowire exhibits p-type characteristic and that WS2 monolayer exhibits n-type behavior, and that the p-n diode from 1D/2D mixed-dimensional Sb2Se3/WS2 heterostructure possesses obvious current rectification behavior. Optoelectronic measurements of the heterostructures show apparent photovoltaic response with an open-circuit voltage of 0.19 V, photoresponsivity of 1.51 A/W (Vds = 5 V) and fast response time of less than 8 ms. The van der Waals epitaxial growth mode of Sb2Se3 nanowires on WS2 monolayers is verified by stripping the Sb2Se3 nanowire from the heterostructures using tape. Together, the direct van der Waals epitaxy opens a facile pathway to 1D/2D mixed-dimensional heterostructures for functional electronic and optoelectronic devices.

Liquid-phase epitaxial growth of two-dimensional semiconductor hetero-nanostructures.

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Generalized Colloidal Approach for Preparing Epitaxial 1D/2D Heterostructures

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Edge Epitaxy of Two-Dimensional MoSe2 and MoS2 Nanosheets on One-Dimensional Nanowires.

Particle-Catalyst-Free Vapor-Liquid-Solid Growth of Millimeter-Scale Crystalline Compound Semiconductors on Nonepitaxial Substrates

Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices

Construction of Various One-Dimensional ZnS/MnS Heteronanostructures with Varied Diameters via the Multistep Solution–Solid–Solid Growth Method

Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Controllable synthesis of NiS and NiS2 nanoplates by chemical vapor deposition

Epitaxial Growth of Two-Dimensional Magnetic Lateral and Vertical Heterostructures

Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures

Colloidal 2D–0D Lateral Nanoheterostructures: A Case Study of Site-Selective Growth of CdS Nanodots onto Bi2Se3 Nanosheets

Non-epitaxial single-crystal 2D material growth by geometric confinement

Heteroepitaxy of Semiconducting 2H-Mote2 Thin Films on Arbitrary Surfaces for Large-Scale Heterogeneous Integration

A Universal In-Situ Interfacial Growth Strategy for Various MXene-Based van der Waals Heterostructures with Uniform Heterointerfaces: The Efficient Conversion from 3D Composite to 2D Heterostructures

Controlled Growth of 2D/2D Heterojunction for High-Performance Sodium Ion Storage

One-Pot Confined Epitaxial Growth of 2D Heterostructure Arrays