Controllable synthesis of NiS and NiS2 nanoplates by chemical vapor deposition

Chen Dai,Bo Li,Jia Li,Bei Zhao,Ruixia Wu,Huifang Ma,Xidong Duan
DOI: https://doi.org/10.1007/s12274-020-2887-5
IF: 9.9
2020-07-02
Nano Research
Abstract:<p class="a-plus-plus">Mulitipe stoichiometric ratio of two-dimensional (2D) transition metal dichalcogenides (TMDCs) attracted considerable interest for their unique chemical and physical properties. Here we developed a chemical vapor deposition (CVD) method to controllably synthesize ultrathin NiS and NiS<sub class="a-plus-plus">2</sub> nanoplates. By tuning the growth temperature and the amounts of the sulfur powder, 2D non-layered NiS and NiS<sub class="a-plus-plus">2</sub> nanoplates can be selectively prepared with the thickness of 2.0 and 7.0 nm, respectively. X-ray diffraction (XRD) and transmission electron microscopy (TEM) characterization reveal that the 2D NiS and NiS<sub class="a-plus-plus">2</sub> nanoplates are high-quality single crystals in the hexagonal and cubic phase, respectively. Electrical transport studies show that electrical conductivities of the 2D NiS and NiS<sub class="a-plus-plus">2</sub> nanoplates are as high as 4.6 × 10<sup class="a-plus-plus">5</sup> and 6.3 × 10<sup class="a-plus-plus">5</sup> S·m<sup class="a-plus-plus">−1</sup>, respectively. The electrical results demonstrate that the synthesized metallic NiS and NiS<sub class="a-plus-plus">2</sub> could serve as good electrodes in 2D electronics.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
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