Abstract:The phase formation sequence of silicides in two-dimensional (2-D) structures has been well-investigated due to their significance in microelectronics. Applying high-quality silicides as contacts in nanoscale silicon (Si) devices has caught considerable attention recently for their potential in improving and introducing new functions in nanodevices. However, nucleation and diffusion mechanisms are found to be very different in one-dimensional (1-D) nanostructures, and thus the phase manipulation of silicides is yet to be achieved there. In this work, we report kinetic phase modulations to selectively enhance or hinder the growth rates of targeted nickel (Ni) silicides in a Si nanowire (NW) and demonstrate that Ni31Si12, δ-Ni2Si, θ-Ni2Si, NiSi, and NiSi2 can emerge as the first contacting phase at the silicide/Si interface through these modulations. First, the growth rates of silicides are selectively tuned through template structure modifications. It is demonstrated that the growth rate of diffusion limited phases can be enhanced in a porous Si NW due to a short diffusion path, which suppresses the formation of interface limited NiSi2. In addition, we show that a confining thick shell can be applied around the Si NW to hinder the growth of the silicides with large volume expansion during silicidation, including Ni31Si12, δ-Ni2Si, and θ-Ni2Si. Second, a platinum (Pt) interlayer between the Ni source and the Si NW is shown to effectively suppress the formation of the phases with low Pt solubility, including the dominating NiSi2. Lastly, we show that with the combined applications of the above-mentioned approaches, the lowest resistive NiSi phase can form as the first phase in a solid NW with a Pt interlayer to suppress NiSi2 and a thick shell to hinder Ni31Si12, δ-Ni2Si, and θ-Ni2Si simultaneously. The resistivity and maximum current density of NiSi agree reasonably to reported values.

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Ultrafast growth of single-crystalline Si nanowires

Solution-phase synthesis of nickel phosphide single-crystalline nanowires

Kinetic Manipulation of Silicide Phase Formation in Si Nanowire Templates.

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Synthesis and Characterization of Α-Phase Silicon Nitride Powders by Direct Nitridation

Phase Control In Solid State Silicide Nanowire Formation

Synthesis of Nickel Silicide/Silicon/Silica Composite Nanostructures by Coevaporation of Sio Powder and Nickel Formate

Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In Situ Synthesis and Analysis

Structural and Electrochemical Properties of Nanostructured Nickel Silicides by Reduction and Silicification of High-Surface-area Nickel Oxide

Growth of Nickel Silicide/Platinum Silicide Axial Nanowire Heterostructure Through Solid-State Reaction

Ultrafast Synthesis of Si Nanowires by DC Arc Discharge Method and Morphology Control

In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide

Large Scale Synthesis of Α-Si3n4 Nanowires Through a Kinetically Favored Chemical Vapour Deposition Process

Mechanistic Investigation of the Formation of Nickel Nanocrystallites Embedded in Amorphous Silicon Nitride Nanocomposites

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Growth of nickel silicides in Si and Si/SiOx core/shell nanowires.

Effective Control of Nanostructured Phases in Rapid, Room-Temperature Synthesis of Nanocrystalline Si in High-Density Plasmas

Efficient Preparation of NiSi Nanowires by DC Arc-Discharge

A simple method to synthesize Si3N4 and SiO2 nanowires from Si or Si/SiO2 mixture

Manipulation Of Phase And Microstructure At Nanoscale For Sic In Molten Salt Synthesis