Abstract:Amorphous SiO2 nanowires are successfully fabricated on fused silica substrates covered by nickel/carbon catalyst bilayers via a method of pulsed laser deposition accompanied by annealing in ambient N-2. The field emission scanning electron microscopy images show that the optimum annealing temperature for the growth of SiO2 nanowires is about 1200 degrees C and the grown SiO2 nanowires become denser, longer and more uniform with the increment of annealing duration. The results of transmission electron microscopy and high-resolution transmission electron microscopy show that the grown nanowires are amorphous and have dark spheres on their tops. The analyses of energy dispersive X-ray spectroscopy reveal that the nanowires are composed of SiO2 and the dark spheres on their tops contain little nickel. It is inferred that nickel, carbon and CO are the key elements to promote the SiO2 nanowire growth in the solid-liquid solid mode. Transmission spectra demonstrate that the as-grown nanowire thin films can have about 94% average transmittance in the range of 350-800 nm, meanwhile the photoluminescence spectra of the as-grown SiO2 nanowire samples show stable ultraviolet emission centered at about 363 nm with a shoulder at about 393 nm. (C) 2016 Elsevier B.V. All rights reserved.

Synthesis and Characterization of Several alpha-Silicon Nitride Nanostructures

Ultrafast growth of single-crystalline Si nanowires

Synthesis And Growth Mechanism Of Silicon Nitride Nanostructures

Fabrication Of Alpha-Si3n4 Nanobelts Assembled By Si3n4 Microcrystals On The Nanowires Via Crystallization Of Amorphous Si3n4 Powders

Preparation of Α-Si3n4 Nanorods Assembled Nanobelts by Crystallizing Amorphous Si3N4 Powders

Mass Production of Α-Silicon Nitride Single-crystalline Nanowires

Synthesis of alpha-Si3N4 whiskers or equiaxed particles from amorphous Si3N4 powders

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Synthesis of Single-Crystalline Α-Si3n4nanobelts by Extended Vapour–liquid–solid Growth

Growth and Mechanism of Network‐Like Branched Si3N4 Nanostructures

Growth Mechanism of Α-Si3n4 Submicron Rods Prepared from Amorphous Si3N4 Powders

Fabrication of α-Si3N4 nanobelts assembled by Si3N4 microcrystals on the nanowires via crystallization of amorphous Si3N4 powders

Large-scale synthesis and characterization of hexagonal prism-shaped SiC nanowires.

Synthesis of Si 3 N 4 Nanowires by Catalyst‐free Nitridation of (si + SiO 2 ) Mixture

0001] oriented aluminum nitride one-dimensional nanostructures: synthesis, structure evolution, and electrical properties

A Simple Approach to Controllably Grow Network-Like Branched Single-Crystalline Si3n4 Nanostructures

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

Synthesis and Characterization of a Large Amount of Branched Ni 2 Si Nanowires

Preparation Of Silicon Nanowires Under High Pressure

Synthesis and Characterization of Amorphous SiO2 Nanowires Via Pulsed Laser Deposition Accompanied by N2 Annealing

Growth and Optical Properties of Ultra-Long Single-Crystalline Α-Si 3 N 4 Nanobelts