Abstract:Amorphous SiO2 nanowires are successfully fabricated on fused silica substrates covered by nickel/carbon catalyst bilayers via a method of pulsed laser deposition accompanied by annealing in ambient N-2. The field emission scanning electron microscopy images show that the optimum annealing temperature for the growth of SiO2 nanowires is about 1200 degrees C and the grown SiO2 nanowires become denser, longer and more uniform with the increment of annealing duration. The results of transmission electron microscopy and high-resolution transmission electron microscopy show that the grown nanowires are amorphous and have dark spheres on their tops. The analyses of energy dispersive X-ray spectroscopy reveal that the nanowires are composed of SiO2 and the dark spheres on their tops contain little nickel. It is inferred that nickel, carbon and CO are the key elements to promote the SiO2 nanowire growth in the solid-liquid solid mode. Transmission spectra demonstrate that the as-grown nanowire thin films can have about 94% average transmittance in the range of 350-800 nm, meanwhile the photoluminescence spectra of the as-grown SiO2 nanowire samples show stable ultraviolet emission centered at about 363 nm with a shoulder at about 393 nm. (C) 2016 Elsevier B.V. All rights reserved.

Fabrication Of Alpha-Si3n4 Nanobelts Assembled By Si3n4 Microcrystals On The Nanowires Via Crystallization Of Amorphous Si3n4 Powders

Fabrication of α-Si3N4 nanobelts assembled by Si3N4 microcrystals on the nanowires via crystallization of amorphous Si3N4 powders

Preparation of Α-Si3n4 Nanorods Assembled Nanobelts by Crystallizing Amorphous Si3N4 Powders

Ultrafast growth of single-crystalline Si nanowires

Synthesis and Characterization of Several alpha-Silicon Nitride Nanostructures

Growth Mechanism of Α-Si3n4 Submicron Rods Prepared from Amorphous Si3N4 Powders

Synthesis of Single-Crystalline Α-Si3n4nanobelts by Extended Vapour–liquid–solid Growth

Synthesis of alpha-Si3N4 whiskers or equiaxed particles from amorphous Si3N4 powders

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Synthesis And Growth Mechanism Of Silicon Nitride Nanostructures

Ultra‐Long Single‐Crystalline Α‐si3n4nanowires: Derived from a Polymeric Precursor

A simple method to synthesize Si3N4 and SiO2 nanowires from Si or Si/SiO2 mixture

Mass Production of Α-Silicon Nitride Single-crystalline Nanowires

Synthesis and Characterization of Amorphous SiO2 Nanowires Via Pulsed Laser Deposition Accompanied by N2 Annealing

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Simultaneous Growth of Si3N4 Nanobelts and Nanodendrites by Catalyst-Assisted Crystallization of Amorphous SiCN

Synthesis of Si 3 N 4 Nanowires by Catalyst‐free Nitridation of (si + SiO 2 ) Mixture

Growth and Optical Properties of Ultra-Long Single-Crystalline Α-Si 3 N 4 Nanobelts

Catalystless Synthesis of Crystalline Si3N4/amorphous SiO2 Nanocables from Silicon Substrates and N2