Preparation of Α-Si3n4 Nanorods Assembled Nanobelts by Crystallizing Amorphous Si3N4 Powders

Zunlan Hu,Wenlong Huo,Tianbin Zhu,Jian Liu,Zhipeng Xie
DOI: https://doi.org/10.1016/j.physe.2019.04.013
IF: 3.369
2019-01-01
Physica E Low-dimensional Systems and Nanostructures
Abstract:In this paper, a new nanomaterial, alpha-Si3N4 nanobelts assembled by high density nanorods were prepared via the crystallization of amorphous Si3N4 at 1450 degrees C for 12 h. The as-synthesized nanobelts exhibited a width of similar to 900 nm and a thickness of similar to 150 nm, and a depressed linear region in the central. alpha-Si3N4 nanorods on the nanobelts had a width of 8-16 nm and a length of 400-450 nm. The nanorods were single-crystal, growing along (101) plane. The nanobelt appeared to be initiated by alpha-Si3N4 nanorods constantly growing on the both sides of a nanowire which was caused by secondary nucleation and the growth of Si3N4 microcrystals. Growth mechanism related to the formation of the nanobelts was analyzed in detail on the basis of vapor-solid mechanism and secondary nucleation. The current work would provide new insights into alpha-Si3N4 nanobelts assembled by nanorods which play an important role in nanoscale devices and show widespread potential applications due to their special morphology.
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