Growth Mechanism of Α-Si3n4 Submicron Rods Prepared from Amorphous Si3N4 Powders

Zunlan Hu,Tianbin Zhu,Weiwei Wu,Zijun Peng,Feng Hu,Zhipeng Xie

DOI: https://doi.org/10.1016/j.ceramint.2018.08.078

IF: 5.532

2018-01-01

Ceramics International

Abstract:Novel polycrystal alpha-Si3N4 submicron rods have been successfully prepared from amorphous Si3N4 powders. As synthesized submicron rods have oblate section, with the size of 110-150 nm in height, 150-300 nm in width and 3 pm to tens of micrometers in length. Underlying growth mechanism was rationally proposed based on the results of X-ray diffraction analyses, scanning electron microscopy and transmission electron microscopy observations. It was demonstrated that the nucleation and crystal growth of alpha-Si3N4 occurred simultaneously during the fabrication process of submicron alpha-Si3N4 rods. The growth of alpha-Si3N4 submicron rods follows vapor solid-solid mechanism. The submicron rods grew from the surface of amorphous Si3N4 powders in N-2 atmosphere without catalysts. The silicon monoxide vapor [(SiO)g], as a reaction intermediate, reacted with nitrogen [N-2] to form alpha-Si3N4 seeds, further growing into the Si3N4 nanowires. Finally, the Si and N atoms deposited on the surface of Si3N4 nanowires and rearranged to form submicron rods.