Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

Heteroepitaxy of Semiconducting 2H-Mote2 Thin Films on Arbitrary Surfaces for Large-Scale Heterogeneous Integration

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Seeded 2D Epitaxy of Large-Area Single-Crystal Films of the Van Der Waals Semiconductor 2H MoTe2.

Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor

2D materials-assisted heterogeneous integration of semiconductor membranes toward functional devices

Remote growth of oxide heteroepitaxy through MoS 2

Thin Film Organic Heteroepitaxy

van der Waals Integration of Large-Area Monocrystalline 3D Perovskite Thin Films on Arbitrary Semiconductor Substrates for Heterojunctions

Direct Multitier Synthesis of Two-Dimensional Semiconductor 2H-Mote2

Remote Growth of Oxide Heteroepitaxy Through MoS2

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications

Direct Multitier Synthesis of Two-Dimensional Semiconductor 2H-MoTe 2

Molecular Beam Epitaxy Growth of Atomically Ultrathin MoTe2 Lateral Heterophase Homojunctions on Graphene Substrates

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Understanding epitaxial growth of two-dimensional materials and their homostructures.

Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy:a review

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Coplanar MoS2–MoTe2 Heterojunction With the Same Crystal Orientation

Epitaxial Growth of Two-Dimensional Magnetic Lateral and Vertical Heterostructures