Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Seeded 2D Epitaxy of Large-Area Single-Crystal Films of the Van Der Waals Semiconductor 2H MoTe2.

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe 2

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Direct Multitier Synthesis of Two-Dimensional Semiconductor 2H-MoTe 2

Halide Vapor Phase Epitaxy of Monolayer Molybdenum Diselenide Single Crystals

Heteroepitaxy of Semiconducting 2H-Mote2 Thin Films on Arbitrary Surfaces for Large-Scale Heterogeneous Integration

Direct Multitier Synthesis of Two-Dimensional Semiconductor 2H-Mote2

Van der Waals Heteroepitaxy of Te Crystallites/2H-MoTe2 Atomically Thin Films on GaAs Substrates by Using Metal-Organic Chemical-Vapor Deposition

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Seeded growth of 2D materials

Ultrahigh Yield and Large-Scale Fast Growth of Large-Size High-Quality Van Der Waals Transition-Metal Telluride Single Crystals

Molecular Beam Epitaxy Growth of Atomically Ultrathin MoTe2 Lateral Heterophase Homojunctions on Graphene Substrates

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control