Abstract:This work reports a high‐reproducible, high‐efficient epitaxial growth method of wafer‐scale (over two inches) monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by designing a "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio. 2D semiconducting transition‐metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next‐generation transistors. To meet the industry needs, large‐scale production of single‐crystal monolayer TMDs in highly reproducible and energy‐efficient manner is critically significant. Herein, it is reported that the high‐reproducible, high‐efficient epitaxial growth of wafer‐scale monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by virtue of a deliberately designed "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short‐distance transport, and moderate deposition of metal precursor on a wafer‐scale substrate, affording high‐efficient and high‐reproducible growth of wafer‐scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer‐scale single‐crystal 2D materials, thus propelling their practical applications in highly integrated high‐performance nanoelectronics and optoelectronics.

Seeded growth of 2D materials

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe 2

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Seeded 2D Epitaxy of Large-Area Single-Crystal Films of the Van Der Waals Semiconductor 2H MoTe2.

Understanding the Seeded Heteroepitaxial Growth of Crystallizable Polymers: the Role of Crystallization Thermodynamics.

Seed‐Induced Vertical Growth of 2D Bi2O2Se Nanoplates by Chemical Vapor Transport

Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Seeded Growth Of High-Quality Transition Metal Dichalcogenide Single Crystals Via Chemical Vapor Transport

Highly Reproducible Epitaxial Growth of Wafer‐Scale Single‐Crystal Monolayer MoS2 on Sapphire

Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices

Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide

Wafer‐scale Epitaxial Growth of Two‐dimensional Organic Semiconductor Single Crystals Toward High‐performance Transistors

Growth of Single Crystalline 2D Materials beyond Graphene on Non‐metallic Substrates

Designed Growth of Large‐Size 2D Single Crystals

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Epitaxial growth of atomically thin Ga2Se2 films on c-plane sapphire substrates

Step-edge Controlled Fast Growth of Wafer-Scale MoSe2 Films by MOCVD