Abstract:Two-dimensional(2D)semiconductors offer an atomic thickness that facilitates superior gate field penetration and enables transistors to maintain shrinking with suppressed short-channel effects,thereby being considered as channel materials for future transistors in the post-Moore era.As a member of high-mobility 2D semiconductors,the air-stable Bi2O2Se with a moderate bandgap has drawn significant attention.Distinguished from other 2D materials,Bi2O2Se can be oxidized layer-by-layer to form a high-k native-oxide dielectric,Bi2SeO5,with an atomically sharp interface,similar to Si/SiO2 in the semiconductor industry.These characteristics make Bi2O2Se an ideal material platform for fabricating various devices with excellent performance,such as transistors,thermoelectrics,optoelectronics,sensors,flexible devices and memory devices.To realize advanced applications of 2D Bi2O2Se,it is essential to develop scalable and high-quality preparation methods with relatively low cost.Chemical vapor deposition(CVD)has shown promise in meeting these requirements.Over the past years,CVD has been widely used to synthesize 2D Bi2O2Se despite some remaining challenges.In this review,we summarize the recent progress in the controlled growth of 2D Bi2O2Se via the CVD method.We begin by introducing the crystal structure and properties of Bi2O2Se.Next,we focus on the morphology control of 2D Bi2O2Se,including various nucleation modes and different dimensionalities by carefully manipulating the CVD process.In terms of nucleation modes,in-plane and vertical epitaxial growth of Bi2O2Se,achieved by controlling the interaction between epitaxial layer and substrate,are reviewed.Wafer-scale continuous Bi2O2Se film facilitates the device integration while vertical 2D fins pave the way for fabricating high-performance fin field-effect-transistors(FinFET).As for the dimensionality control,the transition from 2D nanoplates to 1D nanoribbons is investigated.Parameters such as precursor ratio,growth temperature and types of catalyst play a key role in such transition.We then discuss the construction of ordered arrays of Bi2O2Se with the above morphology by selective growth and post treatment for potential device integration.In addition,we highlight the electrical quality improvement of the grown material via defect control and strain release.For example,both the Se poor growth condition and the out-of-plane strain-free growth contribute to higher mobility of Bi2O2Se.Lastly,we propose potential strategies for precise control of Bi2O2Se structures and quality.In order to meet the demands of advanced electronic applications,more efforts are expected to made to achieve uniform,transferable and site-specific preparation of high-quality single-crystal Bi2O2Se on a large scale.

Seed‐Induced Vertical Growth of 2D Bi2O2Se Nanoplates by Chemical Vapor Transport

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Growth Mechanism for Vertically Oriented Layered In2Se3 Nanoplates

Exploration on the Growth of Bi2O2Se Films and Nanosheet by an ALD-assisted CVD Method

Controlling the Lateral and Vertical Dimensions of Bi2Se3 Nanoplates Via Seeded Growth

Horizontally Self‐Standing Growth of Bi2O2Se Achieving Optimal Optoelectric Properties

Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates.

Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se:Controllability and Material Quality

Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi_2O_2Se Films

The High-Yield Growth of Bi 2 Se 3 Nanostructures Via Facile Physical Vapor Deposition

Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi$_2$O$_2$Se Films

Layer-Controlled Growth of Single-Crystalline 2D Bi2O2Se Film Driven by Interfacial Reconstruction

Seeded growth of 2D materials

High Mobility Two-Dimensional Bismuth Oxyselenide Single Crystals with Large Grain Size Grown by Reverse-Flow Chemical Vapor Deposition

Substrate Mediation in Vapor Deposition Growth of Layered Chalcogenide Nanoplates: A Case Study of Snse2

Growth of Vertical MoS2 Nanosheets on Carbon Materials by Chemical Vapor Deposition: Influence of Substrates

Role of the Spatial Distribution of Gas Flow for Tuning the Vertical/Planar Growth of Nonlayered Two-Dimensional Nanoplates

Controllable and Universal Anisotropic Vapor–solid Growth of Vertical 2D Metal Chalcogenide Nanoflakes with Enhanced Photoelectric and Electrocatalytic Properties

Salt‐Assisted Low‐Temperature Growth of 2D Bi2O2Se with Controlled Thickness for Electronics

Controllable Epitaxial Growth of MoSe2 Bilayers with Different Stacking Orders by Reverse-flow Chemical Vapor Deposition.

Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors.