Abstract:As extraordinary topological insulators, 2D bismuth telluride (Bi2Te3) nanosheets have been synthesized and controlled with a few-layer structure by a facile and fast solvothermal process. The detail-oriented growth evolution of 2D Bi2Te3 in an ethylene glycol reducing solution is discovered and recorded for direct observation of the liquid–solid interactions through the use of environmental SEM. At the initial synthesis stage, Te nanowires are rapidly synthesized and observed in solution. In the next stage, Bi nanoclusters slowly adhere to the Te nanowires and react to form hierarchical Te-Bi2Te3 nanostructured materials. Additionally, the Te nanowires shorten in-plane in an orderly manner, while the Bi2Te3 nanosheets exhibit directional out-of-plane epitaxial growth. In the last procedure, Bi2Te3 nanosheets with a clear hexagonal appearance can be largely obtained. Experiments performed under these rigorous conditions require careful consideration of the temperature, time, and alkaline environment for each reaction process. In addition, the yield of a wider and thinner Bi2Te3 nanosheet is synthesized by manipulating the crystal growth with an optimal alkaline concentration, which is found through statistical analysis of the AFM results. In the UV–Vis–NIR spectroscopy results, the main peak in the spectrum tends to redshift, while the other peak in the ultraviolet range decreases during Bi2Te3 nanosheet synthesis, facilitating a rapid understanding of the trends in the morphological evolution of the Bi2Te3 materials in solution. By rationalizing the above observations, we are the first to report the success of environmental SEM, HAADF-STEM, and UV–Vis–NIR spectroscopy for confirming the Bi2Te3 nanosheet formation mechanism and the physical properties in the solvent media. This research promotes the future optimization of promising Bi2Te3 nanomaterials that can be used in the fabrication of thermoelectric and topological components.

Screw-dislocation-driven Bidirectional Spiral Growth of Bi₂Se₃ Nanoplates.

Effect of Screw-Dislocation on Electrical Properties of Spiral-Type Bi2se3 Nanoplates

Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates.

Screw-Dislocation-Driven Growth of Two-Dimensional Few-Layer and Pyramid-Like WSe2 by Sulfur-Assisted Chemical Vapor Deposition

One-pot Synthesis of Bi2Se3 Nanostructures with Rationally Tunable Morphologies

Synthesis of Multishell Nanoplates by Consecutive Epitaxial Growth of Bi2Se3 and Bi2Te3 Nanoplates and Enhanced Thermoelectric Properties

Topological insulator nanowires and nanoribbons.

Controlling the Lateral and Vertical Dimensions of Bi2Se3 Nanoplates Via Seeded Growth

Ethylenediaminetetraacetic acid-assisted synthesis of Bi 2 Se 3 nanostructures with unique edge sites

Growth Mechanism for Vertically Oriented Layered In2Se3 Nanoplates

Direct Observation of the Epitaxial Growth of Bismuth Telluride Topological Insulators from One-Dimensional Heterostructured Nanowires

Structure-Dependent Optical Properties of Self-Organized Bi2Se3 Nanostructures: from Nanocrystals to Nanoflakes.

Non-Steady-State Symmetry Breaking Growth of Multilayered SnSe2 Nanoplates

Seed‐Induced Vertical Growth of 2D Bi2O2Se Nanoplates by Chemical Vapor Transport

Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition

Catalyst-Free Growth of Millimeter-Long Topological Insulator Bi2Se3 Nanoribbons and the Observation of pi Berry Phase

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy

The Fractal Splitting Growth of Sb2s3 and Sb2se3 Hierarchical Nanostructures

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator