Abstract:Topological insulators are exotic states of matter that show quantum-Hall-like behaviour in the absence of a magnetic field. Surface states in such systems are protected against scattering and are thought to provide an avenue for the realization of fault-tolerant quantum computing. Experiments now reveal the observation of such a topological state of matter in Bi2Se3, a naturally occurring stoichiometric material with a simple surface-state structure and a bulk energy gap larger than kBT at room temperature. Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects1,2,3,4,5,6,7. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks8,9,10,11,12,13,14,15. It has been proposed that a topological insulator2 with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation14. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Topological Surface State Evolution in Bi 2 Se 3 via Surface Etching

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Robust Topological States in Bi<sub>2</sub>Se<sub>3</sub> against Surface Oxidation

Communication: Surface Stability and Topological Surface States of Cleaved Bi2se3: First-Principles Studies

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

Intrinsic and extrinsic perturbations on the topological insulator Bi2Se3 surface states

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Understanding the Finite Size and Surface Relaxation Effects on the Surface States of Bi2Se3 Family Topological Insulators

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Electrons on the surface of Bi2Se3 form a topologically-ordered two dimensional gas with a non-trivial Berry's phase