Abstract:By growing a topological insulator on top of a high-temperature superconducting substrate it is possible to induce superconductivity in the surface states of the topological insulator. Moreover, the pairing symmetry of the induced superconductivity is s-wave, unlike the d-wave symmetry of the substrate. Topological insulators are a new class of material1,2, that exhibit robust gapless surface states protected by time-reversal symmetry3,4. The interplay of such symmetry-protected topological surface states and symmetry-broken states (for example, superconductivity) provides a platform for exploring new quantum phenomena and functionalities, such as one-dimensional chiral or helical gapless Majorana fermions5, and Majorana zero modes6 that may find application in fault-tolerant quantum computation7,8. Inducing superconductivity on the topological surface states is a prerequisite for their experimental realization1,2. Here, by growing high-quality topological insulator Bi2Se3 films on a d-wave superconductor Bi2Sr2CaCu2O8+δ using molecular beam epitaxy, we are able to induce high-temperature superconductivity on the surface states of Bi2Se3 films with a large pairing gap up to 15 meV. Interestingly, distinct from the d-wave pairing of Bi2Sr2CaCu2O8+δ, the proximity-induced gap on the surface states is nearly isotropic and consistent with predominant s-wave pairing as revealed by angle-resolved photoemission spectroscopy. Our work could provide a critical step towards the realization of the long sought Majorana zero modes.

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Interfacial protection of topological surface states in ultrathin Sb films.

Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.

Fermi-level tuning of the Dirac surface state in (Bi1-x Sb x )2Se3 thin films

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Observation of Dirac-like surface state bands on the top surface of BiSe

Topological Surface State Evolution in Bi 2 Se 3 via Surface Etching

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Surface dominated transport in single crystalline nanoflake devices of topological insulator Bi1.5Sb0.5Te1.8Se1.2

Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van-der-Waals ferromagnet Cr2Si2Te6

Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3

Separation of Top and Bottom Surface Conduction in Bi2te3 Thin Films

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.