Abstract:Coupling interaction between the bottom and top surface electronic states and the influence on transport and optical properties of Bi2Se3 thin films with 1-8 quintuple layers (QLs) have been investigated by first principles calculations. Obvious spatial and thickness dependences of coupling interaction are found by analyzing hybridization of two surface states. In the thin film with a certain thickness, from the outer to inner atomic layers, the coupling interaction exhibits an increasing trend. On the other hand, as thickness increases, the coupling interaction shows a disproportionate decrease trend. Moreover, the system with 3 QLs exhibits stronger interaction than that with 2 QLs. The presence of coupling interaction would suppress destructive interference of surface states and enhance resistance in various degrees. In view of the inversely proportional relation to transport channel width, the resistance of thin films should show disproportionate thickness dependence. This prediction is qualitatively consistent with the transport measurements at low temperature. Furthermore, the optical properties also exhibit obvious thickness dependence. Especially as the thickness increases, the coupling interaction results in red and blue shifts of the multiple-peak structures in low and high energy regions of imaginary dielectric function, respectively. The red shift trend is in agreement with the recent experimental observation and the blue shift is firstly predicted by the present calculation. The present results give a concrete understanding of transport and optical properties in devices based on Bi2Se3 thin films with few QLs.

Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

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Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Spatial and Thickness Dependence of Coupling Interaction of Surface States and Influence on Transport and Optical Properties of Few-Layer Bi2Se3

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

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Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

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Observation of Dirac-like surface state bands on the top surface of BiSe

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Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

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Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Topology of Bi$_2$Se$_3$ nanosheets

Coherent topological transport on the surface of Bi₂Se₃

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Proximity-effect-induced Superconducting Gap in Topological Surface States - A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures