Abstract:Proximity-induced magnetic effects on the surface Dirac spectra of topological insulators are investigated by scanning tunneling spectroscopic studies of bilayer structures consisting of undoped Bi2Se3 thin films on top of Cr-doped Bi2Se3 layers. For thickness of the top Bi2Se3 layer equal to or smaller than 3 quintuple layers, a spatially inhomogeneous surface spectral gap Δ opens up below a characteristic temperature T c 2 D , ?> which is much higher than the bulk Curie temperature T c 3 D ?> determined from the anomalous Hall resistance. The mean value and spatial homogeneity of the gap Δ generally increase with increasing c-axis magnetic field (H) and increasing Cr doping level (x), suggesting that the physical origin of this surface gap is associated with proximity-induced c-axis ferromagnetism. On the other hand, the temperature (T) dependence of Δ is non-monotonic, showing initial increase below T c 2 D , ?> which is followed by a ‘dip’ and then rises again, reaching maximum at T ≪ T c 3 D . ?> These phenomena may be attributed to proximity magnetism induced by two types of contributions with different temperature dependences: a three-dimensional contribution from the bulk magnetism that dominates at low T, and a two-dimensional contribution associated with the RKKY interactions mediated by surface Dirac fermions, which dominates at T c 3 D ?> ≪ T < T c 2 D . ?> In addition to the observed proximity magnetism, spatially localized sharp resonant spectra are found along the boundaries of gapped and gapless regions. These spectral resonances are long-lived at H = 0, with their occurrences being most prominent near T c 2 D ?> and becoming suppressed under strong c-axis magnetic fields. We attribute these phenomena to magnetic impurity-induced topological defects in the spin texture of surface Dirac fermions, with the magnetic impurities being isolated Cr impurities distributed near the interface of the bilayer system. The long-term stability of these topologically protected two-level states may find potential applications to quantum information technology.

Coherent topological transport on the surface of Bi₂Se₃

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Tunable Surface Conductivity In Bi2se3 Revealed In Diffusive Electron Transport

Topological phases of topological insulator thin films

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Emergence of a weak topological insulator from the Bi$_x$Se$_y$ family and the observation of weak anti-localization

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films

Direct Measurement of Surface Transport on a Bulk Topological Insulator

Magnetism-induced Massive Dirac Spectra and Topological Defects in the Surface State of Cr-doped Bi2Se3-bilayer Topological Insulators

Nontrivial Surface State Transport In Bi2se3 Topological Insulator Nanoribbons

Intrinsic electron-phonon resistivity of Bi2Se3 in the topological regime

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Weak Antilocalization And Electron-Electron Interaction In Coupled Multiple-Channel Transport In A Bi2se3 Thin Film

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping