Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping

Sumana Paul,Moumita Das,Sujoy Datta,Raja Chakraborty,Prabhat Mandal,P. K. Giri
DOI: https://doi.org/10.1039/D4TC02226B
2024-08-30
Abstract:Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical spin--momentum locking of the surface states arises from intrinsic spin--orbit coupling (SOC) and provides topological protection to the surface states against scattering from external perturbations, like defects and non-magnetic impurities. Breaking the topological protection of surface states of topological insulators is an essential prerequisite for exploring their applications. Rare-earth ions typically exhibit larger magnetic moments than transition-metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Bi$_2$Se$_3$ is an interesting material; on the one hand, it has semiconducting properties when it is thin sheets; on the other hand, it's a topological insulator when the structure has a minimum of six quintuple layers (QLs), with diverse applications in photothermal, thermoelectric, and optical properties. Here, we have developed a controlled colloidal synthesis with low temperature and a cost-effective process for the synthesis of undoped and Eu-doped 2D layered Bi$_2$Se$_3$ nanosheets. Scanning tunneling spectroscopy measurements demonstrated a correlation between the shift of Dirac point position and the dopant content, which has been theoretically established by the band structure calculation. At low temperatures below 10K, for the 10\% Eu-doped sample, magnetic data suggests an antiferromagnetic ordering in the sample, which may be the contribution of the mixed valence state of Europium. Our results support that antiferromagnetic exchange interaction can exist in topological surface states in rare-earth Eu-doped Bi$_2$Se$_3$, which can open a new window to novel quantum phenomena.
Materials Science
What problem does this paper attempt to address?
This paper attempts to introduce antiferromagnetic ordering on the surface states of Bi₂Se₃ topological insulator through europium (Eu) doping. Specifically, the research objectives are: 1. **Develop a low - temperature and cost - effective synthesis method**: for the preparation of undoped and Eu - doped two - dimensional (2D) Bi₂Se₃ nanosheets. 2. **Study the influence of Eu doping on the properties of Bi₂Se₃**: including changes in structural, optical and magnetic properties. 3. **Explore the antiferromagnetic ordering in Eu - doped Bi₂Se₃**: verify whether Eu doping can induce antiferromagnetic exchange interaction in the surface states of Bi₂Se₃, thus opening a new window for quantum phenomena. ### Main research contents: - **Synthesis method**: Undoped and Eu - doped Bi₂Se₃ nanosheets were synthesized by wet - chemical method. - **Structural characterization**: Techniques such as X - ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM) were used to study the crystal structure and morphology of the samples. - **Optical properties**: The absorption characteristics of the samples were analyzed by ultraviolet - visible - near - infrared (UV - vis - NIR) spectroscopy, and the band gap was calculated. - **Magnetic properties**: The magnetic properties of the samples, especially the antiferromagnetic ordering at low temperature, were measured by scanning tunneling microscopy (STM) and superconducting quantum interference device - vibrating sample magnetometer (SQUID - VSM). - **Theoretical calculation**: Through density functional theory (DFT) calculations, the experimentally observed property changes were further explained. ### Key findings: - **Structural change**: Eu doping led to the shift of XRD peak positions, indicating that Eu successfully replaced Bi atoms. - **Optical properties**: Eu doping reduced the band gap of Bi₂Se₃ from 1.29 eV to 1.07 eV. - **Magnetic properties**: In the 10% Eu - doped sample, antiferromagnetic ordering was observed at low temperature (<10 K), which may be caused by the mixed valence states of europium (Eu³⁺/Eu²⁺). These results indicate that Eu doping not only changes the optical and magnetic properties of Bi₂Se₃, but also successfully introduces antiferromagnetic ordering in the surface states, providing a new direction for future spintronics applications.