Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Wenqing Liu,Damien West,Liang He,Yongbing Xu,Jun Liu,Kejie Wang,Yong Wang,Gerrit van der Laan,Rong Zhang,Shengbai Zhang,Kang L. Wang
DOI: https://doi.org/10.1021/acsnano.5b03980
IF: 17.1
2015-01-01
ACS Nano
Abstract:Magnetic doping is the most common method for breaking time-reversal-symmetry surface states of topological insulators (TIs) to realize novel physical phenomena and to create beneficial technological applications. Here we present a study of the magnetic coupling of a prototype magnetic TI, that is, Cr-doped Bi2Se3, in its ultrathin limit which is expected to give rise to quantum anomalous Hall (QAH) effect. The high quality Bi2-xCrxSe3 epitaxial thin film was prepared using molecular beam epitaxy (MBE), characterized with scanning transimission electron microscopy (STEM), electrical mag :to t :ran sport, and it X-ray magnetic circularly dichroism (XMCD) techniques, and the results were simulated using density functional theory (DFT) with (SOC). We observed a sizable spin moment m(spin) = (2.05 +/- 0.20) mu B/Cr and a small and negative orbital moment m(orb) = (-0.05 +/- 0.02) mu(B)/Cr of the Bi1.94Cr0.06Se3 thin film at 2.5 K. A remarkable fraction of the (Cr-Bi-Cr)(3+) antiferromagnetic dimer in the Bi2-xCrxSe3 for 0.02 <x < 0.40 was obtained using first-principles simulations, which was neglected in previous studies. The spontaneous coexistence of ferro- and antiferromagnetic Cr defects in Bi1.94Cr0.06Se3 explains our experimental observations and those based on conventional magnetometry which universally report magnetic moments significantly lower than 3 AtB/Cr predicted by Hund's rule.
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