Abstract:The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications.

Engineering Topological Surface State of Cr-doped Bi2Se3 under external electric field

Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Magnetically Doped Semiconducting Topological Insulators

Magnetism-induced Massive Dirac Spectra and Topological Defects in the Surface State of Cr-doped Bi2Se3-bilayer Topological Insulators

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Experimental Observation of Dual Magnetic States in Topological Insulators

Electric-field Control of Spin–orbit Torque in a Magnetically Doped Topological Insulator

Robust Gapless Surface State and Rashba-splitting Bands Upon Surface Deposition of Magnetic Cr on Bi_2Se_3

Magnetic quantum phase transition in Cr-doped Bi 2 (Se x Te 1− x ) 3 driven by the Stark effect

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3

Magnetic Quantum Phase Transition in Cr-doped Bi2(SexTe1−x)3 Driven by the Stark Effect

Magnetizing Topological Surface States of Bi2Se3 with a CrI3 Monolayer.

Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films

Magnetization of Topological Surface States of Topological Insulators by Two-dimensional Ferromagnetism

Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films

Chemical-Potential-Dependent Gap Opening At The Dirac Surface States Of Bi2se3 Induced By Aggregated Substitutional Cr Atoms

Mass Acquisition Of Dirac Fermions In Magnetically Doped Topological Insulator Sb2te3 Films

Magnetic Exchange Mechanism and Quantized Anomalous Hall Effect in Bi2Se3 Film with a CrWI6 Monolayer

Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi) 2 Te 3

Surface Electronic Structure of Cr Doped Bi2Se3 Single Crystals