Abstract:Proximity-induced magnetic effects on the surface Dirac spectra of topological insulators are investigated by scanning tunneling spectroscopic studies of bilayer structures consisting of undoped Bi2Se3 thin films on top of Cr-doped Bi2Se3 layers. For thickness of the top Bi2Se3 layer equal to or smaller than 3 quintuple layers, a spatially inhomogeneous surface spectral gap Δ opens up below a characteristic temperature T c 2 D , ?> which is much higher than the bulk Curie temperature T c 3 D ?> determined from the anomalous Hall resistance. The mean value and spatial homogeneity of the gap Δ generally increase with increasing c-axis magnetic field (H) and increasing Cr doping level (x), suggesting that the physical origin of this surface gap is associated with proximity-induced c-axis ferromagnetism. On the other hand, the temperature (T) dependence of Δ is non-monotonic, showing initial increase below T c 2 D , ?> which is followed by a ‘dip’ and then rises again, reaching maximum at T ≪ T c 3 D . ?> These phenomena may be attributed to proximity magnetism induced by two types of contributions with different temperature dependences: a three-dimensional contribution from the bulk magnetism that dominates at low T, and a two-dimensional contribution associated with the RKKY interactions mediated by surface Dirac fermions, which dominates at T c 3 D ?> ≪ T < T c 2 D . ?> In addition to the observed proximity magnetism, spatially localized sharp resonant spectra are found along the boundaries of gapped and gapless regions. These spectral resonances are long-lived at H = 0, with their occurrences being most prominent near T c 2 D ?> and becoming suppressed under strong c-axis magnetic fields. We attribute these phenomena to magnetic impurity-induced topological defects in the spin texture of surface Dirac fermions, with the magnetic impurities being isolated Cr impurities distributed near the interface of the bilayer system. The long-term stability of these topologically protected two-level states may find potential applications to quantum information technology.

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Magnetic Quantum Phase Transition in Cr-doped Bi2(SexTe1−x)3 Driven by the Stark Effect

Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Topological phase transition induced by magnetic proximity effect in two dimensions

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Phase transitions in intrinsic magnetic topological insulator with high-frequency pumping

Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi) 2 Te 3

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Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

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Engineering Topological Surface State of Cr-doped Bi2Se3 under external electric field

Quantum Corrections Crossover and Ferromagnetism in Magnetic Topological Insulators

Interplay Between Different Magnetisms in Cr-doped Topological Insulators.

Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field

Magnetism-induced Massive Dirac Spectra and Topological Defects in the Surface State of Cr-doped Bi2Se3-bilayer Topological Insulators

Stabilizing the Fermi Level of Cr-Doped Magnetic Topological Insulators by Al Passivation

Experimental Observation of Dual Magnetic States in Topological Insulators

Topological Quantum Weak Antilocalization Limit and Anomalous Hall Effect in Semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey Heterostructure

Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films

Ordering Mechanism and Quantum Anomalous Hall Effect of Magnetically Doped Topological Insulators