Abstract:We study the magnetic proximity effect on a two-dimensional topological insulator in a CrI$_3$/SnI$_3$/CrI$_3$ trilayer structure. From first-principles calculations, the BiI$_3$-type SnI$_3$ monolayer without spin-orbit coupling has Dirac cones at the corners of the hexagonal Brillouin zone. With spin-orbit coupling turned on, it becomes a topological insulator, as revealed by a non-vanishing $Z_2$ invariant and an effective model from symmetry considerations. Without spin-orbit coupling, the Dirac points are protected if the CrI$_3$ layers are stacked ferromagnetically, and are gapped if the CrI$_3$ layers are stacked antiferromagnetically, which can be explained by the irreducible representations of the magnetic space groups $C_{3i}^1$ and $C_{3i}^1(C_3^1)$, corresponding to ferromagnetic and antiferromagnetic stacking, respectively. By analyzing the effective model including the perturbations, we find that the competition between the magnetic proximity effect and spin-orbit coupling leads to a topological phase transition between a trivial insulator and a topological insulator.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how the magnetic proximity effect affects the electronic structure and topological properties in two - dimensional topological insulators. Specifically, the researchers constructed a three - layer heterostructure model of CrI₃/SnI₃/CrI₃ and, through first - principles calculations, explored the influence of the CrI₃ layer on the SnI₃ monolayer topological insulator under different magnetic arrangements (ferromagnetic arrangement and antiferromagnetic arrangement). ### Research Background - **Topological Insulator**: A time - reversal - invariant system with a non - zero Z₂ invariant, characterized by the fact that the bulk material is insulating while the surface or edge is conductive. - **Magnetic Proximity Effect**: When a topological insulator is in contact with a magnetic material, the spin polarization of the magnetic material can affect the electronic structure of the topological insulator. ### Main Findings 1. **Electronic Structure of SnI₃ Monolayer**: - When spin - orbit coupling (SOC) is ignored, the SnI₃ monolayer exhibits a Dirac - cone - like band structure near the Fermi level. - After introducing SOC, the band structure opens an energy gap of about 0.11 eV at the center of the Brillouin zone, indicating that the SnI₃ monolayer is a topological insulator, which has been verified by the non - zero Z₂ invariant and the effective Hamiltonian model. 2. **Influence of Magnetic Proximity Effect**: - **Ferromagnetic Arrangement**: When the magnetic moments between the CrI₃ layers are ferromagnetically arranged, the Dirac point of the SnI₃ monolayer is preserved, and SnI₃ maintains the properties of a topological insulator. - **Antiferromagnetic Arrangement**: When the magnetic moments between the CrI₃ layers are antiferromagnetically arranged, the Dirac point of the SnI₃ monolayer opens an energy gap of about 16 meV, causing the system to transform from a topological insulator to a trivial insulator. ### Physical Mechanism - **Magnetic Space Group**: Ferromagnetic arrangement and antiferromagnetic arrangement correspond to different magnetic space groups (C₁³i and C₁³i(C₁³) respectively), and these different symmetries determine whether the Dirac point is protected. - **Effective Hamiltonian**: By introducing an effective Hamiltonian including SOC and antiferromagnetism, the researchers revealed the mechanism of the topological phase transition. When the strength of the antiferromagnetic interaction exceeds SOC, the system transforms from a topological insulator to a trivial insulator. ### Conclusion - This research shows that the magnetic proximity effect can regulate the topological phase transition by changing the magnetic arrangement of the system, which is of great significance for the design and preparation of new topological materials. - This finding may help to understand the spin - orbit torque effect at the interface between magnetic materials and topological insulators and its application in current - induced magnetization reversal. Through these studies, the authors not only deepen the understanding of two - dimensional topological insulators but also provide a theoretical basis for future applications in spintronics and quantum computing fields.

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