Abstract:An interplay of conservation and breaking of local and global symmetries in topological phases of matter leads to the emergence of topological phenomena including quantum anomalous (QAH) Hall effect, topological superconductivity, and non-Abelian quantum statistics. Among the members of the family of topological materials, magnetically doped topological crystalline insulators (TCI) were foreseen to host topologically protected QAH states generating multiple dissipationless edge and surface conduction channels with Chern number C 1. The symmetry protected topological phase of the SnTe class of TCI is characterized by a mirror symmetry resulting in topological surface states. Theoretical and experimental studies demonstrated that four Dirac points are located at the time-reversed-invariant-momentum (TRIM) points for the (111) surface of the SnTe compounds. In this work, via low temperature magnetotransport studies, the opening of the gaps at the TRIMs is demonstrated in ferromagnetic 30 nm thick Sn1-xMnxTe (111) thin epitaxial layers grown onto BaF2(111) substrates by molecular beam epitaxy. While a spin mediated magnetoconductance is observed in layers with 𝑥 0.03, the appearance of hysteretic magnetoconductance behaviour and square-like anomalous Hall effect indicate the onset of a hole mediated ferromagnetic ordering in epitaxial Sn1-xMnxTe (111) layers for 𝑥 0.06. The anomalous Hall angle, 𝜃AH~0.3 estimated for Sn0.92Mn0.08Te is one of the highest recorded for magnetic topological quantum materials. The tuning of the global band topology by magnetic doping opens wide perspectives for topology driven quantum spintronic technology.

Ordering Mechanism and Quantum Anomalous Hall Effect of Magnetically Doped Topological Insulators

Quantum Anomalous Hall Effect In Doped Ternary Chalcogenide Topological Insulators Tlbite2 And Tlbise2

Quantum Corrections Crossover and Ferromagnetism in Magnetic Topological Insulators

Large Gap Quantum Anomalous Hall Effect in a Type-I Heterostructure Between a Magnetically Doped Topological Insulator and Antiferromagnetic Insulator

Realization of Stable Ferromagnetic Order in a Topological Insulator: Codoping-enhanced Magnetism In4ftransition Metal Dopedbi2s

Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films

Magnetic Exchange Mechanism and Quantized Anomalous Hall Effect in Bi2Se3 Film with a CrWI6 Monolayer

Phonon and defect mediated quantum anomalous Hall insulator to metal transition in magnetically doped topological insulators

Interplay Between Different Magnetisms in Cr-doped Topological Insulators.

Magnetic Quantum Phase Transition in Cr-doped Bi2(SexTe1−x)3 Driven by the Stark Effect

Interplay of anomalous Hall angle and magnetic anisotropy in ferromagnetic topological crystalline insulators

Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films

Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi) 2 Te 3

Topological Quantum Weak Antilocalization Limit and Anomalous Hall Effect in Semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey Heterostructure

Structural tuning magnetism and topology in a magnetic topological insulator

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Rational design principles of quantum anomalous Hall effect from superlattice-like magnetic topological insulators

From Magnetically Doped Topological Insulator to the Quantum Anomalous Hall Effect

Magnetizing Topological Surface States of Bi2Se3 with a CrI3 Monolayer.

Experimental Observation of Dual Magnetic States in Topological Insulators