Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures
Xiong Yao,Hee Taek Yi,Deepti Jain,Myung-Geun Han,Seongshik Oh
DOI: https://doi.org/10.1021/acs.nanolett.1c00668
IF: 10.8
2021-07-15
Nano Letters
Abstract:Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs and is commonly achieved by changing the magnetic doping concentration, which inevitably affects the spinâorbit coupling strength and the topological properties. Here, we demonstrate tunable magnetic properties in topological heterostructures over a wide range, from a ferromagnetic phase with a Curie temperature of around 100 K all the way to a paramagnetic phase, while keeping the overall chemical composition the same, by controlling the thickness of nonmagnetic spacer layers between two atomically thin magnetic layers. This work showcases that spacer-layer control is a powerful tool to manipulate magneto-topological functionalities in MTI heterostructures. Furthermore, the interaction between the MTI and the Cr<sub>2</sub>O<sub>3</sub> buffer layers also leads to a robust topological Hall effect surviving up to a record-high 6 T of magnetic field, shedding light on the critical role of interfacial layers in thin-film topological materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.1c00668?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.1c00668</a>.BST control samples with and without a Cr<sub>2</sub>O<sub>3</sub> buffer/capping layer, Curie temperatures for samples with different <i>t</i>, Hall resistance data of <i>t</i> = 0, 2 samples as grown and months later, topological Hall resistance of sample <i>t</i> = 0 at 1.5 and 33 K, control samples for testing the effect of CrBST layer position, comparison of Hall effects for the <i>t</i> = 0 sample over time, control samples for testing the relationship between the THE and Cr<sub>2</sub>O<sub>3</sub> buffer/capping layer, fitting of the topological Hall effect, Hall resistance data for sample <i>t</i> = 8 before and after subtracting ordinary Hall resistance, and transport data for a homogeneously Cr doped BST sample (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.1c00668/suppl_file/nl1c00668_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology