Abstract:The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications.

Magnetically Doped Semiconducting Topological Insulators

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Magnetism-induced Massive Dirac Spectra and Topological Defects in the Surface State of Cr-doped Bi2Se3-bilayer Topological Insulators

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Tailoring Magnetic Doping in the Topological Insulator Bi2Se3

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3

Influence of Doping on the Topological Surface States of Crystalline Bi2Se3 Topological Insulators

Magnetization of Topological Surface States of Topological Insulators by Two-dimensional Ferromagnetism

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Mass Acquisition Of Dirac Fermions In Magnetically Doped Topological Insulator Sb2te3 Films

Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

Interplay Between Different Magnetisms in Cr-doped Topological Insulators.

Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping

Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field

Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3

Magnetotransport and Berry phase Tuning in Gd-doped Bi2Se3 Topological Insulator Single Crystals

Surface-State-Dominated Transport in Crystals of the Topological Crystalline Insulator In-Doped Pb1-X Snxte