Abstract:Proximity-induced magnetic effects on the surface Dirac spectra of topological insulators are investigated by scanning tunneling spectroscopic studies of bilayer structures consisting of undoped Bi2Se3 thin films on top of Cr-doped Bi2Se3 layers. For thickness of the top Bi2Se3 layer equal to or smaller than 3 quintuple layers, a spatially inhomogeneous surface spectral gap Δ opens up below a characteristic temperature T c 2 D , ?> which is much higher than the bulk Curie temperature T c 3 D ?> determined from the anomalous Hall resistance. The mean value and spatial homogeneity of the gap Δ generally increase with increasing c-axis magnetic field (H) and increasing Cr doping level (x), suggesting that the physical origin of this surface gap is associated with proximity-induced c-axis ferromagnetism. On the other hand, the temperature (T) dependence of Δ is non-monotonic, showing initial increase below T c 2 D , ?> which is followed by a ‘dip’ and then rises again, reaching maximum at T ≪ T c 3 D . ?> These phenomena may be attributed to proximity magnetism induced by two types of contributions with different temperature dependences: a three-dimensional contribution from the bulk magnetism that dominates at low T, and a two-dimensional contribution associated with the RKKY interactions mediated by surface Dirac fermions, which dominates at T c 3 D ?> ≪ T < T c 2 D . ?> In addition to the observed proximity magnetism, spatially localized sharp resonant spectra are found along the boundaries of gapped and gapless regions. These spectral resonances are long-lived at H = 0, with their occurrences being most prominent near T c 2 D ?> and becoming suppressed under strong c-axis magnetic fields. We attribute these phenomena to magnetic impurity-induced topological defects in the spin texture of surface Dirac fermions, with the magnetic impurities being isolated Cr impurities distributed near the interface of the bilayer system. The long-term stability of these topologically protected two-level states may find potential applications to quantum information technology.

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Controllable magnetic doping of the surface state of a topological insulator

Magnetically Doped Semiconducting Topological Insulators

An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi<sub>2</sub>Se<sub>3</sub>

An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3

Controlling The Carriers Of Topological Insulators By Bulk And Surface Doping

Probing the Coulomb Gap in the Topological Insulator BiSbTeSe2 Via Quantum Capacitance

Magnetism-induced Massive Dirac Spectra and Topological Defects in the Surface State of Cr-doped Bi2Se3-bilayer Topological Insulators

Stability, Electronic, And Magnetic Properties Of The Magnetically Doped Topological Insulators Bi2se3, Bi2te3, And Sb2te3

Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

Topological Control: Systematic Control of Topological Insulator Dirac Fermion Density on the Surface of Bi2Te3

Spin-orbital Groundstates of Superconducting Doped Topological Insulators (A Majorana Platform)

Gating the Charge State of Single Fe Dopants in the Topological Insulator Bi 2 Se 3 with a Scanning Tunneling Microscope

Modulation of crystal and electronic structures in topological insulators by rare-earth doping

Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices

Experimental Observation of Dual Magnetic States in Topological Insulators

Tailoring Magnetic Doping in the Topological Insulator Bi2Se3

Mass Acquisition Of Dirac Fermions In Magnetically Doped Topological Insulator Sb2te3 Films

Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping