Abstract:Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical spin–momentum locking of the surface states arises from intrinsic spin-orbit coupling (SOC) and provides topological protection to the surface states against scattering from external perturbations, like defects and non-magnetic impurities. Breaking the topological protection of surface states of topological insulators is an essential prerequisite for exploring their applications. Rare-earth ions typically exhibit larger magnetic moments than transition-metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Bi2Se3 is an interesting material; on the one hand, it has semiconducting properties when it is thin sheets; on the other hand, it's a topological insulator when the structure has a minimum of six quintuple layers (QLs), with diverse applications in photothermal, thermoelectric, and optical properties. Here, we have developed a controlled colloidal synthesis with low temperature and a cost-effective process for the synthesis of undoped and Eu-doped 2D layered Bi2Se3 nanosheets. Scanning tunneling spectroscopy measurements demonstrated a correlation between the shift of Dirac point position and the dopant content, which has been theoretically established by the band structure calculation. At low temperatures below 10K, for the 10% Eu doped sample, magnetic data suggests an antiferromagnetic ordering in the sample, which may be the contribution of the mixed valance state of Europium. Our results support that antiferromagnetic exchange interaction can exist in topological surface states in rare earth Eu-doped Bi2Se3, which can open a new window to novel quantum phenomena.

Gating the Charge State of Single Fe Dopants in the Topological Insulator Bi 2 Se 3 with a Scanning Tunneling Microscope

Study of Intrinsic Defect States of FeSe with Scanning Tunneling Microscopy

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

Scanning Tunnelling Spectroscopic Studies of Dirac Fermions in Graphene and Topological Insulators

Double Fe-impurity charge state in the topological insulator Bi$_2$Se$_3$

Unveiling the Charge Density Wave Inhomogeneity and Pseudogap State in 1T-Tise2

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Probing Dirac Fermion Dynamics in Topological Insulator Bi2Se3 Films with a Scanning Tunneling Microscope.

Reversible Superconductor-Insulator Transition in (Li, Fe)OHFeSe Flakes Visualized by Gate-Tunable Scanning Tunneling Spectroscopy

Unveiling the Electronic Inhomogeneity and Pseudogap in Transition Metal Dichalcogenide 1T-Tise2

Controllable magnetic doping of the surface state of a topological insulator

Dirac States of 2D Topological Insulators: Effect of Heterovalent Dopant-Content

Structural Defects And Electronic Properties Of The Cu-Doped Topological Insulator Bi2se3

Magnetically Doped Semiconducting Topological Insulators

Identification of Magnetic Dopants on the Surfaces of Topological Insulators: Experiment and Theory for Fe on Bi2Te3(111)

Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping

Massive Dirac fermions and strong Shubnikov–de Haas oscillations in single crystals of the topological insulator Bi 2 Se 3 doped with Sm and Fe

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films