Abstract:Individual relaxation dynamics of electrons and holes in optically pumped semiconductors is rarely observed due to their overlap. Here we report the individual dynamics of long-lived (~200 mks) holes observed at room temperature in a 10 nm thick film of the 3D topological insulator (TI) Bi2Se3 coated with a 10 nm thick MgF2 layer using transient absorption spectroscopy in the UV-Vis region. The ultraslow hole dynamics was observed by applying multiphoton resonant pumping of massless Dirac fermions and bound valence electrons in Bi2Se3 at a certain wavelength sufficient for their photoemission and subsequent trapping at the Bi2Se3/MgF2 interface. The emerging deficit of electrons in the film makes it impossible for the remaining holes to recombine, thus causing their ultraslow dynamics measured at a specific probing wavelength. We also found an extremely long rise time (~600 ps) for this ultraslow optical response, which is due to the large spin-orbit coupling (SOC) splitting at the valence band maximum and the resulting intervalley scattering between the splitting components. The ultraslow hole dynamics in Bi2Se3 due to the presence of the Bi2Se3/MgF2 interface is nevertheless much faster than the known ultraslow electron dynamics at the Si/SiO2 interface, also induced by multiphoton excitation in Si. The observed dynamics of long-lived holes is gradually suppressed with decreasing Bi2Se3 film thickness for the 2D TI Bi2Se3 (film thickness 5, 4, and 2 nm) due to the loss of resonance conditions for multiphoton photoemission caused by the gap opening at the Dirac surface state nodes. This behavior indicates that the dynamics of massive Dirac fermions predominantly determines the relaxation of photoexcited carriers for both the 2D topologically nontrivial and 2D topologically trivial insulator phases.

Probing Dirac Fermion Dynamics in Topological Insulator Bi2Se3 Films with a Scanning Tunneling Microscope.

Scanning Tunnelling Spectroscopic Studies of Dirac Fermions in Graphene and Topological Insulators

Tunable Dirac Fermion Dynamics in Topological Insulators

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi2Se3 with scanning tunneling spectroscopy

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Direct observation of quantum confinement of massless Dirac fermions in a topological insulator

Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological InsulatorBi2Se3Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy

A computational investigation of topological insulator Bi2Se3 film

Observation of Quantum-Tunneling Modulated Spin Texture in Ultrathin Topological Insulator Bi2Se3 Films

Topological phases of topological insulator thin films

Massive Dirac Fermions and Spin Physics in an Ultrathin Film of Topological Insulator

Observation of ultraslow hole dynamics in the 3D topological insulator Bi2Se3 coated with a thin MgF2 layer using multiphoton pumped UV-Vis transient absorption spectroscopy

Quasiparticle scattering in three-dimensional topological insulators near the thickness limit

Gigantic surface life-time of an intrinsic topological insulator revealed via time-resolved (pump-probe) ARPES

Landau Quantization of Topological Surface States Inbi2se3

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Gigantic Surface Lifetime Of An Intrinsic Topological Insulator

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Gating the Charge State of Single Fe Dopants in the Topological Insulator Bi 2 Se 3 with a Scanning Tunneling Microscope

Spin-polarized Quantum Well States Onbi2−xfexse3