Abstract:Two quintuple layers of strong topological insulator Bi2Se3 are coupled by a Bi bilayer in BiSe crystal. We investigated its electronic structure using angle resolved photoelectron spectroscopy to study its topological nature. Dirac like linearly dispersive surface state bands are observed on the 001 surface of BiSe and Sb doped BiSe, similar to Bi2Se3. Moreover, the lower part of the SSBs buries deep in the bulk valence band. Overlap region between the SSBs and BVB is large in Sb doped system and the SSBs deviate from the Dirac like linear dispersion in this region. These results highlight the role of interlayer coupling between the Bi bilayer and the Bi2Se3 QLs. Furthermore, we observed a large intensity imbalance in the SSBs located at the positive and negative k parallel directions. This asymmetry pattern gradually reverses as the excitation energy scans from low 14eV to high 34eV value. However, we did not observe signal of surface magnetization resulting from the intensity imbalance in SSBs due to hole-generated uncompensated spin accumulation in the photoexcitation process. The main reason for this could be the faster relaxation process for photo hole due to the presence of the Bi bilayer between the adjacent Bi2Se3 QLs. The observed photon energy dependent intensity variation could be a signature of the mixing between the spin and the orbit texture of the SSBs.

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Intrinsic and extrinsic perturbations on the topological insulator Bi2Se3 surface states

Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Topological Surface State Evolution in Bi 2 Se 3 via Surface Etching

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Topological Dirac Surface States in Ternary Compounds GeBi 2 Te 4 ,snbi 2 Te 4 and Sn 0.571 Bi 2.286 Se 4

Imaging the Two-Component Nature of Dirac–Landau Levels in the Topological Surface State of Bi2Se3

The Electronic Structure of Clean and Adsorbate-Covered Bi2se3: an Angle-Resolved Photoemission Study

Electrons on the surface of Bi2Se3 form a topologically-ordered two dimensional gas with a non-trivial Berry's phase

Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

Bulk and surface electron scattering in disordered Bi$_{2}$Te$_{3}$ probed by quasiparticle interference

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Observation of Dirac-like surface state bands on the top surface of BiSe

Topological Dirac surface states in ternary compounds GeBi<sub>2</sub>Te<sub>4</sub>, SnBi<sub>2</sub>Te<sub>4</sub> and Sn<sub>0.571</sub>Bi<sub>2.286</sub>Se<sub>4</sub> *