Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Electrons on the surface of Bi2Se3 form a topologically-ordered two dimensional gas with a non-trivial Berry's phase

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Observation of Topological Order in the TlBiSe2 Class : Probing The

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

The Coexistence of Superconductivity and Topological Order in the Bi 2 Se 3 Thin Films

Exotic Topological Insulator States and Topological Phase Transitions in Sb2se3-Bi2se3 Heterostructures

Aharonov-Bohm interference in topological insulator nanoribbons

A computational investigation of topological insulator Bi2Se3 film

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Synthesis and Quantum Transport Properties of Bi2se3 Topological Insulator Nanostructures

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Topological phases of topological insulator thin films

Single Dirac Cone Topological Surface State and Unusual Thermoelectric Property of Compounds from a New Topological Insulator Family