Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

T. Valla,Huiwen Ji,L. M. Schoop,A. P. Weber,Z.-H. Pan,J. T. Sadowski,E. Vescovo,A. V. Fedorov,A. N. Caruso,Q. D. Gibson,L. Muchler,C. Felser,R. J. Cava
DOI: https://doi.org/10.1103/PhysRevB.86.241101
2013-01-08
Abstract:We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating Bi$_2$ layers and Bi$_2$Se$_3$ layers; the inclusion of S allows the growth of large crystals, with the formula Bi$_4$Se$_{2.6}$S$_{0.4}$. The crystals cleave along the interfaces between the Bi$_2$ and Bi$_2$Se$_3$ layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the $\Gamma$ point of the surface Brillouin zone, with the spin structure indicating that this material is a topological insulator.
Materials Science,Strongly Correlated Electrons
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