Abstract:Alloys of Bi2Te3 and Sb2Te3 [(Bi1-xSbx)(2)Te-3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb: Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb)(2)Te-3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x similar to 0.7, but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n-type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x similar to 0.7 sample shows great similarity to pristine Bi2Te3. This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (Bi1-xSbx)(2)Te-3.

Intrinsic Topological Insulator Bi 1.5 Sb 0.5 Te 3-x Se x Thin Crystals

Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

Temperature-dependent terahertz conductivity of topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Pressure Induced Topological Phase Transition in Layered Bi2S3

Antiferromagnetic topological insulating state in Tb$_{0.02}$Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystals

Low-carrier-concentration Crystals of the Topological Insulator Bi2Te2Se

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Band Structure of Topological Insulator BiSbTe1.25Se1.75

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films

Electronic Structures and Surface States of the Topological Insulatorbi1−xsbx

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

The rhombohedral Sb2Se3 is also an intrinsic topological insulator

Sn-doped Bi1.1Sb0.9Te2S, a bulk topological insulator with ideal properties

Defects and High Bulk Resistivities in the Bi-rich Tetradymite Topological Insulator Bi2+xTe2−xSe

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films