Abstract:We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.

Electronic Structures and Surface States of the Topological Insulatorbi1−xsbx

Surface States of the Topological Insulator Bi_{1-x}Sb_x

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Pressure Induced Topological Phase Transition in Layered Bi2S3

Evolution of Surface States in Bi1-Xsbx Alloys Across the Topological Phase Transition

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

Topological Weyl Semimetals in Bi1-xSbx Alloys

Realization of Tunable Dirac Cone and Insulating Bulk States in Topological Insulators (Bi1−xsbx)2te3

Direct Observation of Spin-Polarized Surface States in the Parent Compound of a Topological Insulator Using Spin- and Angle-Resolved Photoemission Spectroscopy in a Mott-polarimetry Mode

Substitution-induced spin-splitted surface states in topological insulator (Bi 1−x Sb x ) 2 Te 3

Superconducting Phase Diagram and Nontrivial Band Topology of Structurally Modulated Sn1-xSbx

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Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Superconductivity in the Surface States of a Bi2X3 Topological Insulator: Effects of a Realistic Model

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.

Topological Phase Transition in Sb-doped Mg3Bi2 Monocrystalline Thin Films

Topological phase transition in Sb-doped Mg 3 Bi 2 monocrystalline thin films

First-Principles Studies of the Three-Dimensional Strong Topological Insulators Bi2te3, Bi2se3 and Sb2te3

Topological Weyl semimetals in $\rm Bi$$_{1-x}$$\rm Sb$$_{x}$ alloys

Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3