Abstract:Proximity-induced magnetic effects on the surface Dirac spectra of topological insulators are investigated by scanning tunneling spectroscopic studies of bilayer structures consisting of undoped Bi2Se3 thin films on top of Cr-doped Bi2Se3 layers. For thickness of the top Bi2Se3 layer equal to or smaller than 3 quintuple layers, a spatially inhomogeneous surface spectral gap Δ opens up below a characteristic temperature T c 2 D , ?> which is much higher than the bulk Curie temperature T c 3 D ?> determined from the anomalous Hall resistance. The mean value and spatial homogeneity of the gap Δ generally increase with increasing c-axis magnetic field (H) and increasing Cr doping level (x), suggesting that the physical origin of this surface gap is associated with proximity-induced c-axis ferromagnetism. On the other hand, the temperature (T) dependence of Δ is non-monotonic, showing initial increase below T c 2 D , ?> which is followed by a ‘dip’ and then rises again, reaching maximum at T ≪ T c 3 D . ?> These phenomena may be attributed to proximity magnetism induced by two types of contributions with different temperature dependences: a three-dimensional contribution from the bulk magnetism that dominates at low T, and a two-dimensional contribution associated with the RKKY interactions mediated by surface Dirac fermions, which dominates at T c 3 D ?> ≪ T < T c 2 D . ?> In addition to the observed proximity magnetism, spatially localized sharp resonant spectra are found along the boundaries of gapped and gapless regions. These spectral resonances are long-lived at H = 0, with their occurrences being most prominent near T c 2 D ?> and becoming suppressed under strong c-axis magnetic fields. We attribute these phenomena to magnetic impurity-induced topological defects in the spin texture of surface Dirac fermions, with the magnetic impurities being isolated Cr impurities distributed near the interface of the bilayer system. The long-term stability of these topologically protected two-level states may find potential applications to quantum information technology.

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Accurate study of the electromagnetic and circuit behavior of finite conducting wedges and interconnects with arbitrary cross-sections

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Unoccupied Topological States on Bismuth Chalcogenides

Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

Electron-phonon Coupling on the Surface of the Topological Insulator Bi2Se3: Determined from Surface Phonon Dispersion Measurements

La Phonons Scattering of Surface Electrons in Bi2se3

Observation of Dirac-like surface state bands on the top surface of BiSe

Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi$_2$Te$_{3-x}$Se$_{x}$ (x = 0, 2, 3)

Surface States Scattering from A Step Defect in the Topological Insulator Bi2te3

Photoemission Spectroscopy of Magnetic and Non-magnetic Impurities on the Surface of the Bi$_2$Se$_3$ Topological Insulator

Dirac cone shift of a passivated topological Bi2Se3 interface state

Magnetism-induced Massive Dirac Spectra and Topological Defects in the Surface State of Cr-doped Bi2Se3-bilayer Topological Insulators

Influence of Doping on the Topological Surface States of Crystalline Bi2Se3 Topological Insulators

Electronic structure and relaxation dynamics in a superconducting topological material

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Surface States of the Topological Insulator Bi_{1-x}Sb_x