Abstract:With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by inherent structural defects that donate electrons and make the bulk conductive. Consequently, controlling these defects is of great interest for future technological applications, and while past literature has focused on adding external doping elements to the mixture, a complete study on undoped Bi2Se3 was still lacking. In this work, we use the self-flux method to obtain high-quality Bi2Se3 single-crystals in the entire concentration range available on the phase-diagram for the technique. By combining basic structural characterization with measurements of the resistivity, Hall effect and Shubnikov-de Haas (SdH) quantum oscillations, the effects of these impurities on the bulk transport are investigated in samples with electron densities ranging from 10^17 cm^-3 to 10^19 cm^-3, from Se-rich to Bi-rich mixtures, respectively, evidencing the transition into a degenerate semiconductor regime. We find that electron-donor impurities, likely Se vacancies, unavoidably shift the Fermi level up to 200 meV inside the conduction band. Other impurities, like interstitial Bi and Se, are shown to play a significant role as scattering centres, specially at low temperatures and in the decoherence of the SdH oscillations. Previous open questions on Bi2Se3, such as the upturn in resistivity below 30 K, the different scattering times in transport and quantum oscillations, and the presence of additional low mobility bands, are addressed. The results outlined here provide a concise picture on the bulk conducting states in flux-grown Bi2Se3 single crystals, enabling better control of the structural defects and electronic properties.

Intrinsic electron-phonon resistivity of Bi2Se3 in the topological regime

Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

Plasmon-enhanced electron-phonon coupling in Dirac surface states of the thin-film topological insulator Bi2Se3

Coherent topological transport on the surface of Bi₂Se₃

Electron-phonon Coupling on the Surface of the Topological Insulator Bi2Se3: Determined from Surface Phonon Dispersion Measurements

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Bulk conducting states of intrinsically doped Bi$_2$Se$_3$

La Phonons Scattering of Surface Electrons in Bi2se3

Ambipolar Surface State Thermoelectric Power of Topological Insulator Bi2Se3

Spatially resolved femtosecond pump-probe study of topological insulator Bi2Se3

Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi$_2$Te$_{3-x}$Se$_{x}$ (x = 0, 2, 3)

Observation of three-dimensional Dirac semimetal state in topological insulator Bi2Se3

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Optical conductivity of a Bi 2 Se 3 topological insulator with a THz transparent top gate

Temperature-dependent terahertz conductivity of topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$

Dirac cone shift of a passivated topological Bi2Se3 interface state

Quantum Oscillations and Nontrivial Transport in (Bi0.92in0.08)2se3