Abstract:Specific features in magnetotransport properties due to gradual forming the topological insulator state in sample of single-crystalline n-type Bi2Te2.7Se0.3 during its cooling were analyzed. The electrical resistivity of sample, measured from 2 K to 240 K, corresponds to partially degenerate semiconductor and dominantly depends on T-effect on electron mobility. The moblity is governed by electron-phonon scattering above TC=50K, whereas below TC electron-electron scattering is dominant scattering mechanism. With increasing temperature, electron content linearly increases above TC, whereas below TC electron content is very weakly T-dependent. Transverse magnetoresistance of sample is positive and strongly T-dependent. Two features, which are characteristic for topological insulators, were found in the magnetoresistance. First feature is a crossover from quadratic to linear magnetoresistance, observed within TC < T <240 K range. Crossover field BC decreases with decreasing temperature. Linear magnetoresistace is quantum one that can be due to presence of Dirac fermions, which occupy the lowest Landau level under magnetic field. Second feature is another crossover from combined quadratic-linear to dip-shaped magnetoresistrance, observed at T ≤ TC . Dip-shaped magnetoresistrance is related to weak antilocalization (WAL) phenomenon. The WAL phenomenon and the electron-electron scattering process coexist at the same temperature range. Dip-shaped magnetoresistrance was analysed by in frames of the Hikami-Larkin-Nagaoka model, developed for systems with strong spin-orbit coupling. At cooling below ~ 30 K, the effective dephasing length rapidly increases that is dominantly related to the electron-electron scattering process, too. The parameter α, characterizing the number of conduction channels, contributing to electron transport, is close to 0.5. This value α corresponds to a single topologically non-trivial conduction channel.

Temperature-dependent terahertz conductivity of topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$

Study of the Surface and Bulk States of Bi2Te3 Topological Insulators Using Terahertz Time-Domain Spectroscopy

Intrinsic Topological Insulator Bi 1.5 Sb 0.5 Te 3-x Se x Thin Crystals

Optical conductivity of a Bi 2 Se 3 topological insulator with a THz transparent top gate

Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

Thermal conductivity for p-(Bi, Sb)$_{2}$Te$_{3}$ films of topological insulators

Antiferromagnetic topological insulating state in Tb$_{0.02}$Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystals

Magnetoresistance and Nonlinear Hall Effect in Quaternary Topological Insulator Bi1.5sb0.5te1.8se1.2

Topological Surface States and Weak Thermal Phonon Anharmonicity of Low-Lying Phonons in GeSb2Te4

Intrinsic electron-phonon resistivity of Bi2Se3 in the topological regime

Evolution of the optical response of the magnetic topological insulators Mn(Bi$_{1-x}$Sb$_{x}$)$_2$Te$_4$ with Sb content

Low-carrier-concentration Crystals of the Topological Insulator Bi2Te2Se

Single Dirac Cone Topological Surface State and Unusual Thermoelectric Property of Compounds from a New Topological Insulator Family

Optical-pump terahertz-probe spectroscopy of the topological crystalline insulator Pb1-xSnxSe through the topological phase transition

Quantum Oscillations of the Topological Surface States in Low Carrier Concentration Crystals of Bi_2-xSb_xTe_3-ySe_y

Anomalous Phonon Softening in the Topological Insulator Sn-doped Bi 1.1 Sb 0.9 Te 2 S

Temperature evolution of transverse magnetoresistance due to forming the topological insulator state in single-crystalline n-type Bi2Te2.7Se0.3

Topological Insulators at Room Temperature

Van Hove Singularity Arising from Mexican-hat-shaped Inverted Bands in the Topological Insulator Sn-doped Bi1.1Sb0.9Te2S

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Characterizing the chemical potential disorder in the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films