What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the temperature - dependent conductivity characteristics of the topological insulator Bi1.5Sb0.5Te1.8Se1.2 (BSTS) in the terahertz frequency range. Specifically, the authors measured the complex optical conductivity of BSTS single crystals in the temperature range from 5 K to 150 K by using the terahertz time - domain spectroscopy (THz - TDS) technique and analyzed its frequency and temperature dependence. ### Main problems 1. **Distinction between surface states and bulk states**: Topological insulators have unique properties, that is, the bulk state is insulating while the surface state is conductive. In order to better understand these materials, it is necessary to distinguish and quantify the contributions of the surface state and the bulk state to the total conductivity. 2. **Temperature - dependent behavior**: Study the changes in conductivity at different temperatures, especially the thermally activated behavior of the low - frequency real - part conductivity, in order to reveal the underlying physical mechanisms. 3. **Model fitting and parameter extraction**: Use the Drude - Lorentz model to fit the experimental data, where the Drude term represents the metallic surface state and the Lorentz term represents the bulk insulating state. Through fitting, key parameters such as plasma frequency and scattering rate are extracted, and their temperature dependence is explored. ### Research background Topological insulators are a special class of electronic materials whose bulk state is an insulator while the surface state is a conductive state. This unique property is attributed to time - reversal symmetry and spin - orbit interaction. Previous studies have shown that in some topological insulators such as Bi2Se3 and Bi2Te3, due to the bulk carriers caused by non - stoichiometry, the bulk state also exhibits metallicity, making it difficult to distinguish the contribution of the surface state. In contrast, the non - stoichiometric impurities in the BSTS material are well compensated, resulting in a high bulk resistance and a more significant contribution of the surface state. ### Experimental methods - **Sample preparation**: Synthesize BSTS single crystals by melting high - purity Bi, Sb, Te and Se elements. - **THz - TDS measurement**: Use the Teraview Spectra 3000 system combined with the Janis ST - 100 - FTIR cryostat to perform terahertz transmission measurements. - **Data analysis**: Obtain the complex refractive index through Fourier transform, and then calculate the complex conductivity and fit it with the Drude - Lorentz model. ### Key findings - **Surface state - dominated conductivity**: At low temperatures, the conductivity of the surface state is about 10^4 times that of the bulk state, indicating that the surface state makes a significant contribution to the conductivity. - **Thermally activated behavior**: The low - frequency real - part conductivity decays exponentially with increasing temperature, which is in line with the thermally activated hopping model, and the activation energy is about 26.7 meV. - **Scattering rate change**: The scattering rate of the surface state changes little with temperature, while the scattering rate of the bulk state increases slightly. In summary, this study, through precise experiments and theoretical analysis, reveals the temperature dependence of the surface - state and bulk - state conductivities in BSTS and the underlying physical mechanisms, providing an important basis for further understanding the properties of topological insulators.

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