Abstract:Anisotropic thermoelectric properties are studied in Ge1‐xInxSb2Te4 single crystals. The impurity band introduced by In‐doping enhances the Seebeck coefficient, while the strong anharmonicity caused by the weak chemical bonding and the mixed occupancy of Ge/Sb atoms on cation sites leads to low lattice thermal conductivity. Finally, zTmax and zTave of 1 and 0.68 are obtained along c‐axis. Layer‐structured GeSb2Te4 is a promising thermoelectric candidate, while its anisotropy of thermal and electrical transport properties is still not clear. In this study, Ge1–xInxSb2Te4 single crystals are grown by Bridgman method, and their anisotropic thermoelectric properties are systematically investigated. Lower electrical conductivity and higher Seebeck coefficient are observed in the c‐axis due to the higher effective mass in this direction. Intrinsically low lattice thermal conductivity is also observed in the c‐axis due to the weak chemical bonding and the strong lattice anharmonicity proved by density functional theory calculation. Indium doping introduces an impurity band in the bandgap of GeSb2Te4 and leads to the locally distorted density of states near the Fermi level, which contributes to enhanced Seebeck coefficient and improved power factor. Ultimately, a peak zT value of 1 at 673 K and an average zT value of 0.68 within 323–773 K are obtained in Ge0.93In0.07Sb2Te4 along the c‐axis direction, which are 54% and 79% higher than that of the pristine GeSb2Te4 single crystal, respectively. This work clarified the origin of intrinsic low lattice thermal conductivity and anisotropy transport properties in GeSb2Te4, and shed light on the performance optimization of other layered thermoelectric materials.

Topological Surface States and Weak Thermal Phonon Anharmonicity of Low-Lying Phonons in GeSb2Te4

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Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric Ge 1- x Sb x Te with Zn-Alloying-Induced Band Alignment.

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

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Atomic‐Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof‐of‐Principle Study in T‐gesb2te4

Ultrafast measurements of mode-specific deformation potentials of Bi$_2$Te$_3$ and Bi$_2$Se$_3$

Significant four-phonon scattering and its heat transfer implications in crystalline Ge$_2$Sb$_2$Te$_5$

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb2Te4 Single Crystals

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Atomic‐Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof‐of‐Principle Study in t ‐GeSb 2 Te 4

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Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi$_2$Te$_{3-x}$Se$_{x}$ (x = 0, 2, 3)

Structural Evolution and Thermoelectric Performance in (gete)m(sb2te3)n Compounds

Modulation of crystal and electronic structures in topological insulators by rare-earth doping

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