Abstract:Bi2Se3 and Bi2Te3 are layered compounds of technological importance, being excellent thermoelectric materials as well as topological insulators. We report density functional theory calculations of the atomic, electronic and thermoelectric properties of strained bulk and thin film Bi2Se3 and Bi2Te3, focusing on an appropriate description of van der Waals interactions. The calculations show that the van der Waals Density functional with Cooper's exchange can reproduce closely the experimental interlayer distances in unstrained Bi2Se3 and Bi2Te3. Interestingly, we predict atomic structures that are in much better agreement with the experimentally determined structure from Nakajima than that obtained from Wyckoff, especially for Bi2Se3 where the difference in atomic structures qualitatively changes the electronic band structure. The band structure obtained using the Nakajima structure, and the theoretically optimized structure, are in much better agreement with previous reports of photoemission measurements, than that obtained using the Wyckoff structure. Fully optimizing atomic structures of bulk and thin film Bi2Se3 and Bi2Te3 under different in-plane and uniaxial strains, we predict that the electronic band gap of both the bulk materials and thin films decreases with tensile in-plane strain and increases with compressive in-plane strain. We also predict, using the semiclassical Boltzmann approach, that the magnitude of the n-type Seebeck coefficient of Bi2Te3 can be increased by the compressive in-plane strain, while that of Bi2Se3 can be increased with tensile in-plane strain. Further, the in-plane power factor of n-doped Bi2Se3 can be increased with compressive uniaxial strain, while that of n-doped Bi2Te3 can be increased by compressive in-plane strain. ...

Ultrafast measurements of mode-specific deformation potentials of Bi$_2$Te$_3$ and Bi$_2$Se$_3$

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Phonon Mode Calculations and Raman Spectroscopy of the Bulk-Insulating Topological Insulator BiSbTeSe_2

Topological Surface States and Weak Thermal Phonon Anharmonicity of Low-Lying Phonons in GeSb2Te4

Measuring, Interpreting and Translating Electron Quasiparticle - Phonon Interactions on the Surfaces of the Topological Insulators Bismuth Selenide and Bismuth Telluride

Electron-phonon Coupling on the Surface of the Topological Insulator Bi2Se3: Determined from Surface Phonon Dispersion Measurements

Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi$_2$Te$_{3-x}$Se$_{x}$ (x = 0, 2, 3)

Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological InsulatorBi2Se3Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy

First Principles Investigations of the Atomic, Electronic, and Thermoelectric Properties of Equilibrium and Strained Bi2Se3 & Bi2Te3, with van der Waals Interactions

Ultrafast surface carrier dynamics in the topological insulator Bi2Te3

Dirac Semimetal PdTe2 Temperature-Dependent Quasiparticle Dynamics and Electron–phonon Coupling

Measurement of Electronic Structure and Surface Reconstruction in the Superionic Cu2−xTe

Two-dimensional universal conductance fluctuations and the electron-phonon interaction of surface states in Bi 2 Te 2 Se microflakes

Time- and momentum-resolved phonon population dynamics with ultrafast electron diffuse scattering

Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi_2Te_3-xSe_x (x = 0, 2, 3)

Thickness-dependent Carrier and Phonon Dynamics of Topological Insulator Bi2Te3 Thin Films.

Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi2Te3−xSex ( …

Anomalous Phonon Softening in the Topological Insulator Sn-doped Bi 1.1 Sb 0.9 Te 2 S

Dirac semimetal PdTe 2 temperature-dependent quasiparticle dynamics and electron–phonon coupling

Strong acoustic-optical phonon coupling in high-performance thermoelectric material Bi0.5Sb1.5Te3

Strain Dependences of Electronic Properties, Band Alignments and Thermal Properties of Bilayer WX2 (X = Se, Te)